Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Phuong Y Le"'
Autor:
Phuong Y. Le, Hilal Nagib, Luke A. Sylvander, Martin W. Allen, Dougal G. McCulloch, James G. Partridge, Hiep N. Tran
Publikováno v:
ACS Applied Electronic Materials. 5:2885-2892
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::611a3e24d3b3d6d7f9bf83861e8595d8
https://doi.org/10.1021/acsaelm.3c00375
https://doi.org/10.1021/acsaelm.3c00375
Publikováno v:
Surface and Interface Analysis. 55:373-382
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc0d9026f5bbcefd2a84666bf4ff636c
https://doi.org/10.1002/sia.7206
https://doi.org/10.1002/sia.7206
Autor:
Hiep N. Tran, Billy J. Murdoch, Phuong Y. Le, Martin W. Allen, Jim G. Partridge, Christopher F McConville
Publikováno v:
IEEE Transactions on Electron Devices. 67:5669-5675
Graphitic (sp2-rich) carbon Schottky contacts to ( $\overline {2}01$ ) $\beta $ -Ga2O3 were fabricated using sputtering and energetic ion deposition with and without the use of an oxygen plasma. As-deposited contacts exhibited room temperature effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b42aea36c6058e71bcf0dec9b9803a1a
https://doi.org/10.1109/ted.2020.3031883
https://doi.org/10.1109/ted.2020.3031883
Autor:
Anthony S. Holland, Billy J. Murdoch, David R. McKenzie, Phuong Y. Le, Hiep N. Tran, Zijun C. Zhao, Jim G. Partridge, Dougal G. McCulloch
Publikováno v:
Nanotechnology. 30(32)
Lateral memristors configured with inert Pt contacts and mixed phase tin oxide layers have exhibited immediate, forming-free, low-power bidirectional resistance switching. Activity dependent conductance and relaxation in the low resistance state rese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f28b852d9a85bd6d52b9c53b892a823
https://pubmed.ncbi.nlm.nih.gov/30991363
https://pubmed.ncbi.nlm.nih.gov/30991363
Autor:
Phuong Y. Le, Anders J. Barlow, Anthony S. Holland, Billy J. Murdoch, Christopher F McConville, Jim G. Partridge, Dougal G. McCulloch
Publikováno v:
Advanced Electronic Materials. 6:2000081
Interconnected SnOx nanoparticle (NP) networks are electroformed within a semi‐insulating SnOx thin‐film and between lateral electrodes. During this top‐down process, Joule heating, disproportionation, and de‐wetting of the SnOx thin‐film p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::549a2625fa7634f903bc3774d333d1b4
https://doi.org/10.1002/aelm.202000081
https://doi.org/10.1002/aelm.202000081
Autor:
Hiep N. Tran, Phuong Y. Le, Thomas J. Raeber, Anthony S. Holland, Hung V. Pham, Jim G. Partridge, Mohammad Saleh N Alnassar
Publikováno v:
Semiconductor Science and Technology. 34:015003
Graphitic contacts to semiconductors have been shown to provide highly rectifying current-voltage characteristics coupled with high thermal/chemical stability. Energetically deposited graphitic contacts to p-type Si have exhibited rectification ratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1925462f8055883e4e5a4db16f4d72d2
https://doi.org/10.1088/1361-6641/aaef69
https://doi.org/10.1088/1361-6641/aaef69
Autor:
Phuong Y Le, Hiep N Tran, Zijun C Zhao, David R McKenzie, Dougal G McCulloch, Anthony S Holland, Billy J Murdoch, Jim G Partridge
Publikováno v:
Nanotechnology; 8/9/2019, Vol. 30 Issue 32, p1-1, 1p