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pro vyhledávání: '"Phuong Thanh Ngoc Vo"'
Autor:
Phuong Thanh Ngoc Vo, Truong Huu Nguyen, Oanh Kieu Truong Le, Anh Tuan Thanh Pham, Thang Bach Phan, Dung Van Hoang, Trang Huyen Cao Pham, Vinh Cao Tran
Publikováno v:
Journal of the European Ceramic Society. 41:3493-3500
Structure modification has been found to tune significantly the transparent-conducting performance, especially mobility and conductivity of hydrogenated Ga-doped ZnO (HGZO) films. The strong correlation between film thickness and mobility of the film
Autor:
Truong Huu Nguyen, Dung Van Hoang, Phuong Thanh Ngoc Vo, Vinh Cao Tran, Thang Bach Phan, Anh Tuan Thanh Pham, Cuong Nhat Le
Publikováno v:
Science and Technology Development Journal. 22:385-390
Introduction: Magnesium tin silicide (MgSiSn) is known as a good-thermoelectric-performance, safe and cost-efficient alloy material. The goal of this work is to design a magnetron co-sputtering configuration for depositing alloy thin films from three
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Autor:
Hanh Kieu Thi Ta, Anh Tuan Thanh Pham, Ching-Ting Lee, Anh Tuan Duong, Tan Le Hoang Doan, P. K. Nair, Phuong Thanh Ngoc Vo, Hoa Thi Lai, Son D. N. Luu, Thang Bach Phan, Yohandys A. Zulueta, Vinh Cao Tran
Publikováno v:
Thin Solid Films. 721:138537
ZnO:Mg(5 at%)/glass and ZnO:Mg/ZnO/glass thin films with a total thickness of 1000 nm were prepared by direct current sputtering. Crystalline diameter in ZnO:Mg (200 nm)/ZnO (800 nm) improved to 26.5 nm compared with 21.9 nm in ZnO:Mg film. Mg-substi
Autor:
Anh Tuan Thanh Pham, Hoa Thi Lai, Phuong Thanh Ngoc Vo, Ngoc Kim Pham, Tan Le Hoang Doan, Vinh Cao Tran, Sungkyun Park, Thang Bach Phan, Hanh Kieu Thi Ta, Hoa Nhu Thi Tran
Publikováno v:
Materials Science and Engineering: B. 261:114712
We investigate the structure, optical properties, and thermoelectric power in terms of residual stresses induced in the undoped ZnO and X-doped ZnO (X = Al, Ga) films. The results show that the different native seed layers self-grown during the initi