Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Phoumra Tan"'
Autor:
Benhai Zhang, Daisy Lu, Scott Silverman, Daniel C. Nuez, Thomas Harper, Michael DiBattista, Phoumra Tan, Mark Lynaugh, Joshua Miller
Publikováno v:
International Symposium for Testing and Failure Analysis.
Sub-nanometer fabrication processes and advanced packaging solutions such as 2.5D stacked silicon interconnect technology (SSIT) facilitate the production of high-performance ICs, but make physical failure analysis and debugging more difficult. For e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d192405bdb4e5400e12f99587d2efea9
https://doi.org/10.31399/asm.cp.istfa2021p0073
https://doi.org/10.31399/asm.cp.istfa2021p0073
Autor:
Phoumra Tan, Marko Simicic, Yoojin Ban, Artemisia Tsiara, Peter De Heyn, Xin Wu, Michael J. Hart, Joris Van Campenhout, Kristof Croes, James Karp, Dimitri Linten, Shih-Hung Chen, Jonathan Chang, Dean Tsaggaris
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
ESD robustness for self-protected advanced Silicon photonic components integrated into optical interposers is reported, including industry-first CDM data. HBM performance in reverse bias polarity is shown to be the limiting factor and is correlated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::700dafe29d5a7a75f104396cdacd3f84
https://doi.org/10.23919/eos/esd52038.2021.9574767
https://doi.org/10.23919/eos/esd52038.2021.9574767
Publikováno v:
International Symposium for Testing and Failure Analysis.
Physical FA innovations in advanced flip-chip devices are essential, especially for die-level defects. Given the increasing number of metal layers, traditional front-side deprocessing requires a lot of work on parallel lapping and wet etching before
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::932d67f84e0fbc7ca592ce1d94368f18
https://doi.org/10.31399/asm.cp.istfa2020p0370
https://doi.org/10.31399/asm.cp.istfa2020p0370
Autor:
Mohammed Fakhruddin, Phoumra Tan, James Karp, Rawat Mini, Vassili Kireev, Dean Tsaggaris, Michael J. Hart
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Methodology proposed that relates 200V CDM voltage specification of S20.20-2014 standard to a realistic 100–200mA CDM peak current for inter-die interfaces. Tribology is considered to be the source of charge accumulation on the bare die during 3D/2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df56eab0687b941fa75b6e2b2a822347
https://doi.org/10.1109/irps.2016.7574556
https://doi.org/10.1109/irps.2016.7574556
Publikováno v:
International Symposium for Testing and Failure Analysis.
With the advent of three-dimensional stacked integrated-circuit (3D IC), the functionality, performance and power of semiconductor devices has been elevated to a new level. At the same time, the analytical techniques used in the evaluation of 3D IC m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47fb05ed77bdaa6bbb509eb937bc9d77
https://doi.org/10.31399/asm.cp.istfa2014p0049
https://doi.org/10.31399/asm.cp.istfa2014p0049
Autor:
Phoumra Tan, Daniel C. Nuez
Publikováno v:
International Symposium for Testing and Failure Analysis.
Conductive anodic filament (CAF) formation is a mechanism caused by an electrochemical migration of metals from a metal trace in ICs or in PCBs. This is commonly caused by the moisture build-up in the affected metal terminals in an IC package or PC b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c0a20e28590cc7bf03e45d7834451c
https://doi.org/10.31399/asm.cp.istfa2014p0218
https://doi.org/10.31399/asm.cp.istfa2014p0218
Autor:
Doug Hamilton, Phoumra Tan
Publikováno v:
EDFA Technical Articles. 17:32-33
Lightly doped source-drain diffusions are difficult if not impossible to delineate using wet chemical etching, but with a few process modifications and the use of edge shorting, a 20:1 HNO3/HF etch for 5 s at room temperature can reveal almost any ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee089ee8258d5a5ed4567f2f4fc58aa1
https://doi.org/10.31399/asm.edfa.2015-2.p032
https://doi.org/10.31399/asm.edfa.2015-2.p032
Autor:
Doug Hamilton, Phoumra Tan
Publikováno v:
EDFA Technical Articles. 16:44-45
This failure analysis case study illustrates the masterful use of a dual-beam FIB to reveal hidden details in a mechanically polished cross-section.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf36f721ed22498cd6546babffe7faba
https://doi.org/10.31399/asm.edfa.2014-4.p044
https://doi.org/10.31399/asm.edfa.2014-4.p044
Publikováno v:
ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis.
The focus of this article is on locating signal-to-ground shorts and plane-to-plane shorts using the time domain reflectometry (TDR) based fault isolation system. The article proposes two comparative techniques for plane-to-plane short location, both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f023b6e68f0332c1358f826380febc
https://doi.org/10.31399/asm.cp.istfa2001p0095
https://doi.org/10.31399/asm.cp.istfa2001p0095
Autor:
Hamilton, Doug1 doug.hamilton@xilinx.com, Phoumra Tan1
Publikováno v:
Electronic Device Failure Analysis. Nov2014, Vol. 16 Issue 4, p44-45. 2p.