Zobrazeno 1 - 10
of 58 525
pro vyhledávání: '"Photodetector"'
Publikováno v:
Guangtongxin yanjiu, Pp 23004501-23004505 (2024)
【Objective】The optical communication system working at the traditional telecommunication band is faced with "capacity crunch" with the rapidly development of optical communication technology. The acceptable loss of 0.2 dB/km (@2 μm) from the hol
Externí odkaz:
https://doaj.org/article/d6f3bbdc5ddc4c6fa5064eeb5c63b8ba
Autor:
Hryhorii P. Parkhomenko, Andriy I. Mostovyi, Marat Kaikanov, Jessica Strey, Mircea C. Turcu, Marvin Diederich, Sascha J. Wolter, Verena Steckenreiter, Joachim Vollbrecht, Viktor V. Brus
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract This study investigates the impact of proton irradiation on perovskite devices fabricated fully through vacuum deposition. Exposure to irradiation induces changes in both electrical and optical properties. The analysis reveals that the main
Externí odkaz:
https://doaj.org/article/3c548b9bc12a4e2790a3a78d541a49e5
Autor:
Asghar Molaei-Yeznabad, Kambiz Abedi
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-24 (2024)
Abstract In this paper, we report a graphene-based plasmonic photodetector optimized using the particle swarm optimization (PSO) algorithm and compatible with complementary metal–oxide–semiconductor (CMOS) technology. The proposed photodetector s
Externí odkaz:
https://doaj.org/article/b3b3ff9116b14a21ae8a139e50ce51d7
Akademický článek
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Akademický článek
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Autor:
Chiranjib Ghosh, Arka Dey, Iman Biswas, Rajeev Kumar Gupta, Vikram Singh Yadav, Ashish Yadav, Neha Yadav, Hongyu Zheng, Mohamed Henini, Aniruddha Mondal
Publikováno v:
Nano Materials Science, Vol 6, Iss 3, Pp 345-354 (2024)
An efficient room-temperature self-powered, broadband (300 nm–1100 nm) photodetector based on a CuO–TiO2/TiO2/p-Si(100) heterostructure is demonstrated. The CuO–TiO2 nanocomposites were grown in a two-zone horizontal tube furnace on a 40
Externí odkaz:
https://doaj.org/article/65cd8f71f7ad4a82bfa617a3830b2af4
Autor:
O. Castelló, Sofía M. López Baptista, K. Watanabe, T. Taniguchi, E. Diez, J. E. Velázquez-Pérez, Y. M. Meziani, J. M. Caridad, J. A. Delgado-Notario
Publikováno v:
Frontiers of Optoelectronics, Vol 17, Iss 1, Pp 1-11 (2024)
Abstract In recent years, graphene field-effect-transistors (GFETs) have demonstrated an outstanding potential for terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz appl
Externí odkaz:
https://doaj.org/article/130a1a7c85b94b91930873fb29b73e8d
Autor:
Junjun Xue, Jiaming Tong, Zhujun Gao, Zhouyu Chen, Haoyu Fang, Saisai Wang, Ting Zhi, Jin Wang
Publikováno v:
Frontiers of Optoelectronics, Vol 17, Iss 1, Pp 1-8 (2024)
Abstract An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and s
Externí odkaz:
https://doaj.org/article/4edc942e41ab40ff8d3bc3c2b05bb04e
Publikováno v:
Nanophotonics, Vol 13, Iss 16, Pp 2961-2970 (2024)
Designing efficient narrow-band near-infrared photodetectors integrated on silicon for telecommunications remains a significant challenge in silicon photonics. This paper proposes a novel silicon-based hot-electron photodetector employing Tamm plasmo
Externí odkaz:
https://doaj.org/article/b82ef63cf3284bb7a2aaf7a45dd8605b
Publikováno v:
Opto-Electronic Science, Vol 3, Iss 4, Pp 1-11 (2024)
Quantum dot-based up-conversion photodetector, in which an infrared photodiode (PD) and a quantum dot light-emitting diode (QLED) are back-to-back connected, is a promising candidate for low-cost infrared imaging. However, the huge efficiency losses
Externí odkaz:
https://doaj.org/article/53632ebde23d48edae6da394189b3d01