Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Phisut Narabadeesuphakorn"'
Autor:
Saran Waiprasoet, Pichaya Pattanasattayavong, Thidarat Imyen, Chayanit Wechwithayakhlung, Sutassana Na-Phattalung, Similan Tanjindaprateep, Satoshi Horike, Phisut Narabadeesuphakorn, Suttipong Wannapaiboon
Publikováno v:
Inorganic Chemistry. 60:16149-16159
The solid-state mechanochemical reactions under ambient conditions of CuSCN and Zn(SCN)2 resulted in two novel materials: partially Zn-substituted α-CuSCN and a new phase CuxZny(SCN)x+2y. The reactions take place at the labile S-terminal, and both p
Autor:
Chayanit Wechwithayakhlung, Suttipong Wannapaiboon, Sutassana Na-Phattalung, Phisut Narabadeesuphakorn, Similan Tanjindaprateep, Saran Waiprasoet, Satoshi Horike, Pichaya Pattanasattayavong
The solid-state mechanochemical reactions under ambient conditions of CuSCN and Zn(SCN)2 resulted in two novel materials: partially Zn-substituted α-CuSCN and a new phase CuxZny(SCN)x+2y. The reactions take place at the labile S-terminal, and both p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c662b13306ead16ee7366a4566c7a2e5
https://doi.org/10.26434/chemrxiv.14703450.v1
https://doi.org/10.26434/chemrxiv.14703450.v1
Autor:
Phisut Narabadeesuphakorn, Visittapong Yordsri, Somchai Ratanathammaphan, Suwat Sopitopan, Somsak Panyakeow, Aniwat Tandaechanurat, Noppadon Nuntawong, Chanchana Thanachayanont, Suwit Kiravittaya, Supachok Thainoi, Songphol Kanjanachuchai
Publikováno v:
Journal of Crystal Growth. 487:40-44
Growth of InSb/GaAs quantum nanostructures on GaAs substrate by using molecular beam epitaxy with low growth temperature and slow growth rate typically results in a mixture of isolated and paired nano-stripe structures, which are termed as single and
Autor:
Jirayu Supasil, Somsak Panyakeow, Noppadon Nuntawong, Suwat Sopitopan, Suwit Kiravittaya, Phisut Narabadeesuphakorn, Somchai Ratanathammaphan, Songphol Kanjanachuchai, Supachok Thainoi, Aniwat Tandaechanurat
Publikováno v:
MRS Advances. 2:2943-2949
InSb has been considered as a promising material for spintronic applications owing to its pronounced spin effects as a result of large intrinsic electronic g-factor. In addition, embedding InSb quantum nanostructures in a GaAs matrix could create typ