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Autor:
Alain Mousa, Dmitry Batuk, Jason Arjavac, Andrew Barnum, Mark Biedrzycki, Anne-Laure Charley, Umesh P. S. Adiga, Rose Marie Haynes, Phillipe Leray
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Process monitoring of extreme ultraviolet (EUV) photoresist requires critical dimension analysis and careful control of extracted parameters like line edge roughness (LER) and line width roughness (LWR). Automated SEM metrology typically provides est