Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Phillip M. L. Kwong"'
Publikováno v:
Digest of Technical Papers., Symposium on VLSI Circuits..
A new 16 Mb (1 Mbit/spl times/16) flash memory on a 0.6 /spl mu/m CMOS process has been designed, that combines the high-speed code execution capabilities of DRAM with nonvolatile, high-density, updatable code storage of flash memory, thus replacing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d174909789cf875e80c35df17de5a2e
https://doi.org/10.1109/vlsic.1995.520688
https://doi.org/10.1109/vlsic.1995.520688
Autor:
Duane R. Mills, Sachidanandan Sambandan, Richard E. Fackenthal, Sherif Sweha, Jahanshir J. Javanifard, S. Pudar, Kevin W. Frary, Mark Bauer, Joseph Tsang, T. Gullard, A. Bashir, Christopher John Haid, Phillip M. L. Kwong, Rodney R. Rozman, D. Leak, Mamun Ur Rashid
Publikováno v:
Proceedings ISSCC '95 - International Solid-State Circuits Conference.
A 3.3 V 50 MHz synchronous 16 Mb flash memory serves applications where zero-wait-state direct execution is essential in removing the performance bottleneck attributed to slow memory in performance (/spl ges/25 MHz) systems. This 16 Mb flash chip sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40c769851b708e3f4dcb7f1e5651eab7
https://doi.org/10.1109/isscc.1995.535456
https://doi.org/10.1109/isscc.1995.535456