Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Phillip Czeslaw Jozwiak"'
Autor:
Cong-Son Trinh, Phillip Czeslaw Jozwiak, Cornelius Christian Russ, Markus Paul Josef Mergens, John Armer, Russell Mohn, B. Keppens, K. Verhaege
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 5:532-542
A novel diode-triggered silicon-controlled rectifier (DTSCR) (Mergens et al., 2003) electrostatic discharge (ESD) protection element is introduced for low-voltage application (signal and supply voltages /spl les/ 1.8 V) with extremely narrow ESD desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db4b7edd86aea2a182aa6885aff4b872
https://doi.org/10.1109/tdmr.2005.853510
https://doi.org/10.1109/tdmr.2005.853510
Autor:
S. Trinh, B. Van Camp, G. Taylor, B. Keppens, K. Verhaege, Phillip Czeslaw Jozwiak, Markus Paul Josef Mergens, John Armer, Russell Mohn, Cornelius Christian Russ, F. De Ranter
Publikováno v:
Microelectronics Reliability. 43:1537-1543
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::560ed6911d0adadd6f42a36a91f1c69c
https://doi.org/10.1016/s0026-2714(03)00272-5
https://doi.org/10.1016/s0026-2714(03)00272-5
Autor:
Russ Mohn, Koen Verhaege, John Armer, Markus Paul Josef Mergens, Christian C. Russ, Phillip Czeslaw Jozwiak
Publikováno v:
Microelectronics Reliability. 43:993-1000
This paper presents a novel Silicon Controlled Rectifier (SCR) for power line and local I/O ESD protection. The High holding current SCRs (HHI-SCR) exhibits a dual ESD clamp characteristic: low-current high-voltage clamping and high-current low-volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3fe49828e6bc3391351e4eb40340001
https://doi.org/10.1016/s0026-2714(03)00125-2
https://doi.org/10.1016/s0026-2714(03)00125-2
Autor:
Phillip Czeslaw Jozwiak, Markus Paul Josef Mergens, John Armer, K. Verhaege, Christian C. Russ
Publikováno v:
Microelectronics Reliability. 42:3-13
This paper presents three novel design techniques, which combined fulfill all major requirements posed on large driver and electrostatic discharge (ESD) protection transistors: minimum area consumption, good ESD robustness and optimized normal operat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48ead063ea84bf8c28f3438eb0d515d6
https://doi.org/10.1016/s0026-2714(01)00237-2
https://doi.org/10.1016/s0026-2714(01)00237-2
Autor:
C. Russ, F. De Ranter, K. Verhaege, Geert Wybo, B. Keppens, Markus Paul Josef Mergens, B. Van Camp, John Armer, Phillip Czeslaw Jozwiak
Publikováno v:
ISCAS (2)
This paper presents a protection strategy for ultra-sensitive I/O containing thin gate oxides, while combining two complementary ESD design approaches: (1) low-voltage diode-chain triggered SCR clamps that allow for efficient voltage clamping; (2) ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71258b6a321975f6a3ddf8ea9335f373
https://doi.org/10.1109/iscas.2005.1464807
https://doi.org/10.1109/iscas.2005.1464807
Autor:
K. Verhaege, B. Keppens, F. De Ranter, Markus Paul Josef Mergens, John Armer, R. Kumar, Phillip Czeslaw Jozwiak
Publikováno v:
CICC
This paper presents a novel active-source-pump (ASP) circuit technique to significantly lower the ESD sensitivity of ultrathin gate inputs in advanced sub-90nm CMOS technologies. As demonstrated by detailed experimental analysis, an ESD design window
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d4d0f31a649cfea1a790ed3f4010353
https://doi.org/10.1109/cicc.2004.1358790
https://doi.org/10.1109/cicc.2004.1358790
Autor:
Phillip Czeslaw Jozwiak, K. Verhaege, B. Keppens, Cong Son Trinh, Cornelius Christian Russ, Markus Paul Josef Mergens, John Armer, Russell Mohn
Publikováno v:
IEEE International Electron Devices Meeting 2003.
A novel diode-triggered SCR (DTSCR) ESD protection element is introduced for low-voltage application (signal, supply voltage /spl les/1.8 V) and extremely narrow ESD design margins. Trigger voltage engineering in conjunction with fast and efficient S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3e349f0b1c188ac577dc8aa7839578
https://doi.org/10.1109/iedm.2003.1269334
https://doi.org/10.1109/iedm.2003.1269334