Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Philippe-Olivier Provost"'
Autor:
Tadeáš Hanuš, Javier Arias‐Zapata, Bouraoui Ilahi, Philippe‐Olivier Provost, Jinyoun Cho, Kristof Dessein, Abderraouf Boucherif
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 14, Pp n/a-n/a (2023)
Abstract Porous germanium (PGe) nanostructures attract a lot of attention for various emerging applications due to their unique properties. Consequently, there is an increasing need for the development of low‐cost synthesis routes that are compatib
Externí odkaz:
https://doaj.org/article/67bc1bbf4ccf4823a67e1c1b96114677
Autor:
Guillaume Gommé, Adrien Cutivet, Boussairi Bouzazi, Abderrahim Rahim Boucherif, Tom MacElwee, Christophe Rodriguez, Meriem Bouchilaoun, Hubert Pelletier, Philippe-Olivier Provost, Hassan Maher, Richard Ares
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, resp
Externí odkaz:
https://doaj.org/article/0e9fb26e01004e3ca334d6f8f0e0e218
Publikováno v:
Water Environment Research. 95
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65eab88b15a9c93e644ea46811eb3de3
https://doi.org/10.1002/wer.10853
https://doi.org/10.1002/wer.10853
Autor:
Tadeas Hanus, Javier Arias-Zapata, Bouraoui Ilahi, Philippe-Olivier Provost, Alexandre Chapotot, Abderraouf Boucherif
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ca8f0a4c2e5ec9bdf05a9f9daacd08c
https://doi.org/10.1109/pvsc48317.2022.9938926
https://doi.org/10.1109/pvsc48317.2022.9938926
Autor:
Christopher E. Valdivia, Ercan M. Dede, Masanori Ishigaki, Simon Fafard, Karin Hinzer, Matthew M. Wilkins, Denis Masson, Philippe-Olivier Provost
Publikováno v:
IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2019, 34 (2), pp.1054-1064. ⟨10.1109/TPEL.2018.2843158⟩
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2019, 34 (2), pp.1054-1064. ⟨10.1109/TPEL.2018.2843158⟩
Photonic power converters (PPCs) are a class of photovoltaic devices designed for efficient conversion of monochromatic (laser or LED) light to electricity. These devices are composed of multiple p-n junction diodes arranged in a tandem configuration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::707b0b17e5fd68128593714a8a2d3eee
https://hal.archives-ouvertes.fr/hal-02453654
https://hal.archives-ouvertes.fr/hal-02453654
Autor:
Adrien Cutivet, Abderrahim Rahim Boucherif, Meriem Bouchilaoun, Boussairi Bouzazi, Richard Arès, Hubert Pelletier, Hassan Maher, Christophe Rodriguez, Tom MacElwee, Philippe-Olivier Provost, Guillaume Gommé
Publikováno v:
AIP Advances
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (6), pp.065123. ⟨10.1063/1.5142615⟩
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
AIP Advances, American Institute of Physics-AIP Publishing LLC, 2020, 10 (6), pp.065123. ⟨10.1063/1.5142615⟩
AIP Advances, Vol 10, Iss 6, Pp 065123-065123-5 (2020)
Thermal and electrical properties of aluminum nitride (AlN) epilayers grown by chemical beam epitaxy (CBE) were investigated. A high growth rate of 5.9 ± 0.4 µm/h was achieved using trimethyl aluminum and ammonia as group III and V precursors, resp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8716d67cb967ac4d3a752495dcb9dd2
https://doi.org/10.1063/1.5142615
https://doi.org/10.1063/1.5142615
Autor:
Marie-Hélène Milot, Maxime Dupuis, Dominic Létourneau, Mathieu Hamel, Julien Bernier-Ouellet, François Michaud, Simon Brière, Philippe-Olivier Provost
Publikováno v:
EMBC
Stroke is one of the leading causes of disability worldwide. Consequently, many stroke survivors exhibit difficulties undergoing voluntary movement in their affected upper limb, compromising their functional performance and level of independence. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ebe4702f12baa64b8f92020c8cbaed6
https://pubmed.ncbi.nlm.nih.gov/28269581
https://pubmed.ncbi.nlm.nih.gov/28269581
Autor:
Karin Hinzer, Christopher E. Valdivia, Philippe-Olivier Provost, Denis Masson, Sanmeet Chahal, Simon Fafard, Matthew M. Wilkins, F. Proulx
Publikováno v:
13th International Conference on Concentrator Photovoltaic Systems (CPV-13)
13th International Conference on Concentrator Photovoltaic Systems (CPV-13), May 2017, Ottawa, Canada
AIP Conference Proceedings
2017, Ottawa, AIP Conference Proceedings, 1881, pp.070005, 2017, ⟨10.1063/1.5001438⟩
13th International Conference on Concentrator Photovoltaic Systems (CPV-13), May 2017, Ottawa, Canada
AIP Conference Proceedings
2017, Ottawa, AIP Conference Proceedings, 1881, pp.070005, 2017, ⟨10.1063/1.5001438⟩
A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::842993521c49452db27388d8713e0a4f
https://doi.org/10.1063/1.5001438
https://doi.org/10.1063/1.5001438
Autor:
Mark C. A. York, Denis Masson, Richard Arès, Vincent Aimez, Philippe-Olivier Provost, F. Proulx, Simon Fafard, L. S. Richard
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2016, 109 (13), ⟨10.1063/1.4964120⟩
Applied Physics Letters, American Institute of Physics, 2016, 109 (13), ⟨10.1063/1.4964120⟩
Photovoltaic power converting III–V semiconductor devices based on the Vertical Epitaxial HeteroStructure Architecture (VEHSA) design have been achieved with up to 20 thin p/n junctions (PT20). Open circuit photovoltages in excess of 23 V are measu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::561928d1ec7382050ed8eae931ee4e01
https://hal.archives-ouvertes.fr/hal-01918137
https://hal.archives-ouvertes.fr/hal-01918137
Autor:
Denis Masson, Philippe-Olivier Provost, Simon Fafard, Richard Arès, Vincent Aimez, F. Proulx, Mark C. A. York
Publikováno v:
physica status solidi (RRL)-Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2017, 11 (2), ⟨10.1002/pssr.201600385⟩
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2017, 11 (2), ⟨10.1002/pssr.201600385⟩
Photon-recycling effects are studied experimentally in photovoltaic power converting III–V semiconductor devices designed with the vertical epitaxial heterostructure architecture (VEHSA). The responsivity of VEHSA structures with multiple thin GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c15fd15a66a84727b84b107c95730c46
https://doi.org/10.1002/pssr.201600385
https://doi.org/10.1002/pssr.201600385