Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Philippe Spinelli"'
Autor:
Philippe Gayet, Vincent Arnal, M. Guillermet, Philippe Spinelli, Joaquin Torres, J. P. Reynard, C. Verove
Publikováno v:
Microelectronic Engineering. 60:143-148
The capability of CVD silicon oxide has been studied to achieve a controlled air gap between copper interconnects for sub-quarter micron CMOS technologies. Several deposition parameters have been investigated and their influence on air gap morphology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dd7f2ee529672b242afd7c989b7ce06
https://doi.org/10.1016/s0167-9317(01)00590-1
https://doi.org/10.1016/s0167-9317(01)00590-1
Autor:
Veronique De-Jonghe, Francois Leverd, Richard Braspenning, Bénédicte Mortini, Philippe Spinelli
Publikováno v:
Advances in Resist Technology and Processing XX.
193 nm chemically amplified resists currently meet the lithographic targets for the 130 nm and 90 nm nodes. However, the integration of such 193 nm materials is still an issue due to lack of etch resistance of 193 nm resist chemistries. Indeed, depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6d9e6eaae8701fa25b949f1c5538d57
https://doi.org/10.1117/12.485128
https://doi.org/10.1117/12.485128
Autor:
Alain G. Deleporte, Pascal Fabre, Ganesh Sundaram, D. Ristoiu, Paul C. Knutrud, Philippe Spinelli, Rolf Arendt, Marc Poulingue, Vincent Vachellerie, Pierre-Olivier Sassoulas
Publikováno v:
SPIE Proceedings.
As geometrical dimensions of semiconductor devices decrease, the need to introduce Cu processes into the fabrication cycle becomes increasingly important as a means of maintaining line resistances and circuit time constants. However, the success of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca624d8d56f38d51039d216c9bf0bbc
https://doi.org/10.1117/12.473461
https://doi.org/10.1117/12.473461