Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Philippe Schieffer"'
Autor:
Lipin Chen, Yoan Léger, Gabriel Loget, Mekan Piriyev, Imen Jadli, Sylvain Tricot, Tony Rohel, Rozenn Bernard, Alexandre Beck, Julie Le Pouliquen, Pascal Turban, Philippe Schieffer, Christophe Levallois, Bruno Fabre, Laurent Pedesseau, Jacky Even, Nicolas Bertru, Charles Cornet
Publikováno v:
Advanced Science, Vol 9, Iss 2, Pp n/a-n/a (2022)
Abstract Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid
Externí odkaz:
https://doaj.org/article/ecb2f9f1ff3849129cd61f86d43df72c
Autor:
Bienlo Flora Zerbo, Mircea Modreanu, Ian Povey, Jun Lin, Antoine Létoublon, Alain Rolland, Laurent Pédesseau, Jacky Even, Bruno Lépine, Pascal Turban, Philippe Schieffer, Alain Moréac, Olivier Durand
Publikováno v:
Crystals, Vol 12, Iss 10, p 1363 (2022)
Silicon-based heterojunction (SHJ) solar cells demonstrate high efficiencies over their homojunction counterparts, revealing the potential of such technologies. We present here the first steps towards the development of molybdenum disulfide (MoS2)/c-
Externí odkaz:
https://doaj.org/article/887267700e23466da84f3d01a9d76452
Autor:
Jules Courtin, Alain Moréac, Gabriel Delhaye, Bruno Lépine, Sylvain Tricot, Pascal Turban, Philippe Schieffer, Jean-Christophe Le Breton
Publikováno v:
Applied Sciences, Vol 9, Iss 23, p 5014 (2019)
Fermi level pinning at metal/semiconductor interfaces forbids a total control over the Schottky barrier height. 2D materials may be an interesting route to circumvent this problem. As they weakly interact with their substrate through Van der Waals fo
Externí odkaz:
https://doaj.org/article/cc60f5b58895426ab69febcb66b88d90
Autor:
Bienlo Flora Christine Zerbo, Mircea Modreanu, Antoine Létoublon, Alain Rolland, Laurent Pedesseau, Jacky Even, Bruno Lépine, Pascal Turban, Philippe Schieffer, Alain Moréac, Olivier Durand
Publikováno v:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5034e19b27f1716df9b0445d28b4c80a
https://doi.org/10.1117/12.2608683
https://doi.org/10.1117/12.2608683
Autor:
Aika Takatsu, Sylvain Tricot, Philippe Schieffer, Kevin Dunseath, Mariko Terao-Dunseath, Keisuke Hatada, Didier Sébilleau
Publikováno v:
Physical Chemistry Chemical Physics
Physical Chemistry Chemical Physics, 2022, 24 (9), pp.5658-5668. ⟨10.1039/D1CP05530E⟩
Physical Chemistry Chemical Physics, 2022, 24 (9), pp.5658-5668. ⟨10.1039/D1CP05530E⟩
International audience; A number of renormalization schemes for improving the convergence of multiple scattering series expansions are investigated. Numerical tests on a small Cu(111) cluster demonstrate their effectiveness, for example increasing th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0919464820c0a2db6c1e5948a30865ce
https://cnrs.hal.science/hal-03594619/document
https://cnrs.hal.science/hal-03594619/document
Autor:
Laurent Pedesseau, Mircea Modreanu, Philippe Schieffer, Antoine Létoublon, Jacky Even, Bruno Lépine, Pascal Turban, Alain Moréac, Olivier Durand, Bienlo Zerbo, Alain Rolland, Ian M. Povey
Publikováno v:
IEEE Xplore
44th International Semiconductor Conference (CAS 2021)
44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩
44th International Semiconductor Conference (CAS 2021)
44th International Semiconductor Conference (CAS 2021), Oct 2021, Online, Romania. ⟨10.1109/CAS52836.2021.9604140⟩
International audience; In this paper, we present the first steps of a process toward the development of MoS2/Si heterojunctions photovoltaics, using 2D 2H-MoS2, whose natural abundance and tunable bandgap make it suitable for such application. A foc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44cdbd3a51ecb8411b7e6218131982fb
https://hal.science/hal-03796793
https://hal.science/hal-03796793
Autor:
Shabnam Dadgostar, Jose Luis Pura Ruiz, Jorge Serrano Gutierrez, Bruno Lepine, Philippe Schieffer, Juan Jimenez
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Materials Science and Engineering: B
Materials Science and Engineering: B, 2022, 283, pp.115830. ⟨10.1016/j.mseb.2022.115830⟩
instname
Materials Science and Engineering: B
Materials Science and Engineering: B, 2022, 283, pp.115830. ⟨10.1016/j.mseb.2022.115830⟩
Producción Científica
The luminescence of SrTiO3 depends on the sample type, either doped or stoichiometric, as grown or treated, the excitation conditions, and temperature. The origin of the luminescence emissions, blue, green, and infrared,
The luminescence of SrTiO3 depends on the sample type, either doped or stoichiometric, as grown or treated, the excitation conditions, and temperature. The origin of the luminescence emissions, blue, green, and infrared,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca5813220a4284703af828a6a1a901a0
https://doi.org/10.1016/j.mseb.2022.115830
https://doi.org/10.1016/j.mseb.2022.115830
Autor:
Rozenn Bernard, Mekan Piriyev, Gabriel Loget, Nicolas Bertru, Jacky Even, Philippe Schieffer, Lipin Chen, Christophe Levallois, Charles Cornet, Laurent Pedesseau, Imen Jadli, Sylvain Tricot, Bruno Fabre, Pascal Turban, Julie Le Pouliquen, Alexandre Beck, T. Rohel, Yoan Léger
Publikováno v:
Advanced Science
Advanced Science, Wiley Open Access, 2021, pp.2101661. ⟨10.1002/advs.202101661⟩
Advanced Science, 2022, 9 (2), pp.2101661. ⟨10.1002/advs.202101661⟩
Advanced Science, Vol 9, Iss 2, Pp n/a-n/a (2022)
Advanced Science, Wiley Open Access, 2021, pp.2101661. ⟨10.1002/advs.202101661⟩
Advanced Science, 2022, 9 (2), pp.2101661. ⟨10.1002/advs.202101661⟩
Advanced Science, Vol 9, Iss 2, Pp n/a-n/a (2022)
Hybrid materials taking advantage of the different physical properties of materials are highly attractive for numerous applications in today's science and technology. Here, it is demonstrated that epitaxial bi‐domain III–V/Si are hybrid structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9feee73ef3f01d6fd427e37a05c36cf
https://hal.archives-ouvertes.fr/hal-03426793
https://hal.archives-ouvertes.fr/hal-03426793
Autor:
S. Tricot, J. C. Le Breton, B. Lépine, J. Courtin, Philippe Schieffer, Pascal Turban, G. Delhaye
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2020, 102 (24), pp.245301. ⟨10.1103/PhysRevB.102.245301⟩
Physical Review B, 2020, 102 (24), pp.245301. ⟨10.1103/PhysRevB.102.245301⟩
Physical Review B, American Physical Society, 2020, 102 (24), pp.245301. ⟨10.1103/PhysRevB.102.245301⟩
Physical Review B, 2020, 102 (24), pp.245301. ⟨10.1103/PhysRevB.102.245301⟩
The mechanisms governing the formation of Schottky barriers at graphene/hydrogen-passivated silicon interfaces where the graphene plays the role of a two-dimensional (2D) metal electrode have been investigated by means of x-ray photoemission spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84a94ac945b7db92a065eb0ccc582b2e
https://hal.archives-ouvertes.fr/hal-03077546/file/es2020jul21_697.pdf
https://hal.archives-ouvertes.fr/hal-03077546/file/es2020jul21_697.pdf
Publikováno v:
Physical Review B. 102
Schottky barrier formation at metal/insulating oxide interfaces relies on complex mechanisms which are difficult to unravel. We propose a detailed numerical study of the atomic, magnetic, and electronic properties of the $\mathrm{Fe}/\mathrm{Sr}\math
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11f2e7c3a55f92bb12b5af077a589dd
https://doi.org/10.1103/physrevb.102.205307
https://doi.org/10.1103/physrevb.102.205307