Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Philippe Latyshev"'
Autor:
Y. G. Shreter, Vladislav Voronenkov, Andrey Zubrilov, Ruslan Gorbunov, Andrey Leonidov, Yuri Lelikov, Natalia Bochkareva, V. S. Kogotkov, Philippe Latyshev
Publikováno v:
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC).
Gallium Nitride substrates are crucial for the production of reliable GaN-based devices with high current density: light emitting diodes and lasers, high-voltage diodes and transistors, and microwave high electron mobility transistors. However, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e0c02e808f9a5c829f9413f8c3664ed
https://doi.org/10.1109/cleoe-eqec.2019.8871587
https://doi.org/10.1109/cleoe-eqec.2019.8871587
Autor:
Andrey Leonidov, Yuri Lelikov, V. S. Kogotkov, Philippe Latyshev, Y. G. Shreter, Andrey Zubrilov, Natalia Bochkareva, Ruslan Gorbunov, Vladislav Voronenkov
Publikováno v:
2019 Compound Semiconductor Week (CSW).
A HVPE reactor for growth of bulk GaN epitaxial layers with a diameter of 50 mm was developed. High-capacity external halide precursor sources for gallium, aluminum and boron allow non-stop growth of bulk GaN layers with a thickness of 10 mm and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f144419f2f2cff36803c9cf9b282a1c7
https://doi.org/10.1109/iciprm.2019.8819335
https://doi.org/10.1109/iciprm.2019.8819335
Autor:
Yu. G. Shreter, Yu. T. Rebane, Vladislav Voronenkov, R. I. Gorbunov, A. I. Tsyuk, N. I. Bochkareva, Philippe Latyshev, Yu. S. Lelikov
Publikováno v:
Semiconductors. 47:127-134
The results of studying the influence of the finite tunneling transparency of injection barriers in light-emitting diodes with InGaN/GaN quantum wells on the dependences of the current, capacitance, and quantum efficiency on the p-n junction voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6c3062d5860c33f309b16c0021143d0
https://doi.org/10.1134/s1063782613010089
https://doi.org/10.1134/s1063782613010089
Autor:
R. I. Gorbunov, Yu. T. Rebane, Andrey Zubrilov, A. I. Tsyuk, Yu. G. Shreter, Vladislav Voronenkov, N. I. Bochkareva, Philippe Latyshev, Yu. S. Lelikov
Publikováno v:
Semiconductors. 46:1032-1039
The mechanism of the internal quantum efficiency droop in InGaN/GaN structures with multiple quantum wells at current densities of up to 40 A cm−2 in high-power light-emitting diodes is analyzed. It is shown that there exists a correlation between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f14c265687b52b1776cb50046c559ab7
https://doi.org/10.1134/s1063782612080039
https://doi.org/10.1134/s1063782612080039
Autor:
Vladislav Voronenkov, Andrey Zubrilov, Ruslan Gorbunov, Philippe Latyshev, Natalia Bochkareva, Y. S. Lelikov, Y. T. Rebane, Yuriy Shreter, Alexander Tsyuk
Publikováno v:
ECS Transactions. 35:91-97
GaN is widely used in emerging solid state lighting industry, blue lasers, power and RF electronics. Due to the lack of native substrates, most GaN devices are grown on sapphire. Lattice constant in c-plane of GaN and sapphire differs by 14%. High la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c27ed684ed9981d1d42a88fa2d21fa7a
https://doi.org/10.1149/1.3570850
https://doi.org/10.1149/1.3570850
Autor:
Y. T. Rebane, Vladislav Voronenkov, Alexander Tsyuk, Natalia Bochkareva, Ruslan Gorbunov, Yuriy Shreter, Philippe Latyshev, Andrey Zubrilov, Y. S. Lelikov
Publikováno v:
ECS Meeting Abstracts. :1474-1474
The effect of growth parameters on stress in thick GaN films grown on sapphire by HVPE method was investigated. We have found two modes of growth with different growth stress. Films grown in one mode have rough surfaces and low stress. The second mod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::600a0e35bab88065850a62248190182f
https://doi.org/10.1149/ma2011-01/24/1474
https://doi.org/10.1149/ma2011-01/24/1474
Autor:
Alexander Tsyuk, Y. G. Shreter, Natalia Bochkareva, Y. T. Rebane, Vladislav Voronenkov, Ruslan Gorbunov, Philippe Latyshev, Y. S. Lelikov, Andrey Zubrilov
Publikováno v:
Applied Physics Letters. 96:133502
The quantum efficiency of GaN-based light-emitting diodes (LEDs) is investigated at temperatures 77–300 K. It is found that the efficiency droop is due to a decrease in the internal quantum efficiency (IQE) in the low-energy part of the emission sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8197d9d923696db55a4840f45103461a
https://doi.org/10.1063/1.3367897
https://doi.org/10.1063/1.3367897