Zobrazeno 1 - 8 of 8 pro vyhledávání: '"Philippe Kowalczyk"'
1
Improvement of Phase‐Change Memory Performance by Means of GeTe/Sb 2 Te 3 Superlattices
Autor: Damien Térébénec, Mathieu Bernard, Marie-Claire Cyrille, N. Castellani, Nicolas Bernier, Nguyet-Phuong Tran, Pierre Noé, Françoise Hippert, Philippe Kowalczyk, Vitomir Sever
Publikováno v: physica status solidi (RRL) – Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters
physica status solidi (RRL)-Rapid Research Letters, Wiley-VCH Verlag, 2021, 15 (3), pp.2000538. ⟨10.1002/pssr.202000538⟩
International audience
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e1e30ecc1420c303a19c11d47554f015
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2
Growth mechanism of highly oriented layered Sb 2 Te 3 thin films on various materials
Autor: Pierre Noé, C. Sabbione, Damien Térébénec, Nicolas Bernier, Cristian Mocuta, Françoise Hippert, Philippe Kowalczyk, Xavier Zucchi
Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (15), pp.154003. ⟨10.1088/1361-6463/ab6b9a⟩
Sb2Te3 is a layered material with outstanding properties leading to applications in interfacial phase change memories, spintronic and thermoelectric devices. For successful integration in devices, controlling the orientation of the atomic planes of S
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b075799264b204d5cdd2777938b8a683
https://hal.univ-grenoble-alpes.fr/hal-03127753
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3
New insights into thermomechanical behavior of GeTe thin films during crystallization
Autor: S. Escoubas, Mathieu Bernard, Cristian Mocuta, N. Burle, Pierre Noé, Olivier P. Thomas, Rebbeca R. Chahine, M. Amara, Philippe Kowalczyk, C. Guichet, Magali Putero, Marion Gallard, Marie-Ingrid Richard
Publikováno v: Acta Materialia
Acta Materialia, 2020, 191, pp.60-69. ⟨10.1016/j.actamat.2020.04.001⟩
Acta Materialia, Elsevier, 2020, 191, pp.60-69. ⟨10.1016/j.actamat.2020.04.001⟩
International audience; In this work, we reexamine Ge rejection in Ge-rich GeTe thin films with a slight deviation from stoichiometry using a unique combination of in situ measurements: curvature and x-ray diffraction as well as electrical resistance
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12fc61580c49e4e52e0c057ceeb9b7f1
https://hal.science/hal-02903073
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4
Local structure of [(GeTe)(2)/(Sb2Te3)(m)](n)super-lattices by x-ray absorption spectroscopy
Autor: Philippe Kowalczyk, Francesco d'Acapito, C. Sabbione, Jean-Yves Raty, Pierre Noé, Françoise Hippert
Publikováno v: Journal of physics. D, Applied physics
53 (2020). doi:10.1088/1361-6463/ab98c1
info:cnr-pdr/source/autori:D'Acapito, F.; Kowalczyk, P.; Raty, J-Y; Sabbione, C.; Hippert, F.; Noe, P./titolo:Local structure of [(GeTe)(2)%2F(Sb2Te3)(m)](n)super-lattices by x-ray absorption spectroscopy/doi:10.1088%2F1361-6463%2Fab98c1/rivista:Journal of physics. D, Applied physics (Print)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:53
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (40), pp.404002. ⟨10.1088/1361-6463/ab98c1⟩
Herein, the local structure of [(GeTe)(2)/(Sb2Te3)(m)](n)chalcogenide super-lattices (SLs), which are at the basis of emerging interfacial Phase-Change Memory (iPCM), is studied by x-ray absoprtion spectroscopy at the Ge-K edge. The quantitative anal
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f439c86ecccd0d1c32d50af92d00cf2
http://www.cnr.it/prodotto/i/435679
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6
Innovative GeS2/Sb2Te3 based phase change memory for low power applications
Autor: N. Castellani, Nicolas Bernier, Luca Perniola, Anthonin Verdy, Mathieu Bernard, Veronique Sousa, Guillaume Bourgeois, Serge Blonkowski, Sophie Chevalliez, Philippe Kowalczyk, Gabriele Navarro, J. Kluge, Pierre Noé
Publikováno v: NVMTS
In this paper, we analyze the electrical performance of a novel Phase-Change Memory (PCM) device based on GeS 2 /Sb 2 Te 3 composition (GSST). Through physico-chemical analysis and electrical characterization we demonstrate a great reduction of the R
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::159552dbef9ecc060d8c36b0bd006c47
https://doi.org/10.1109/nvmts.2017.8171305
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7
Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices
Autor: C. Sabbione, Nicolas Bernier, Philippe Kowalczyk, Françoise Hippert, Walter Batista-Pessoa, Cristian Mocuta, Pierre Noé
Publikováno v: Small
Small, 2018, 14 (24), pp.1704514. ⟨10.1002/smll.201704514⟩
Small, Wiley-VCH Verlag, 2018, 14 (24), pp.1704514. ⟨10.1002/smll.201704514⟩
International audience; Van der Waals layered GeTe/Sb2Te3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so-called interfacial phase-change memory (iPCM) devices. GeTe/Sb2Te3 SLs are made by periodical
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9911d93c063569414ddb27926448c806
https://doi.org/10.1002/smll.201704514
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8
Akademický článek
Growth mechanism of highly oriented layered Sb2Te3 thin films on various materials.
Autor: Françoise Hippert, Philippe Kowalczyk, Nicolas Bernier, Chiara Sabbione, Xavier Zucchi, Damien Térébénec, Cristian Mocuta, Pierre Noé
Publikováno v: Journal of Physics D: Applied Physics; 4/8/2020, Vol. 53 Issue 15, p1-1, 1p
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