Investigation of sidewall damage induced by reactive ion etching on AlGaInP MESA for micro-LED application

Autor: Jean-Paul Barnes, Névine Rochat, Badhise Ben Bakir, Christophe Licitra, Bruno Masenelli, Younes Boussadi, Philippe Ferrandis

Publikováno v: Journal of Luminescence
Journal of Luminescence, Elsevier, 2021, 234, pp.117937. ⟨10.1016/j.jlumin.2021.117937⟩
Journal of Luminescence, 2021, 234, pp.117937. ⟨10.1016/j.jlumin.2021.117937⟩

International audience; Previous reports have studied the impact of sidewall defects on AlGaInP micro light emitting diode (µLED) only by Current-Voltage-Luminescence (I-V-L) measurements. In this work, we propose an alternative approach to investig

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c37c954f73b21658398ccf171df219d6
https://hal.archives-ouvertes.fr/hal-03462277

Transport properties of a thin GaN channel formed in an Al0.9Ga0.1N/GaN heterostructure grown on AlN/sapphire template

Autor: Julien Bassaler, Rémi Comyn, Catherine Bougerol, Yvon Cordier, Farid Medjdoub, Philippe Ferrandis

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2022, 131 (12), pp.124501. ⟨10.1063/5.0077107⟩

Despite a high lateral breakdown voltage above 10 kV for large contact distances and a breakdown field of 5 MV cm−1 for short contact distances, an Al0.9Ga0.1N/GaN heterostructure with an 8 nm strained GaN channel grown on an AlN/sapphire template

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb1531bb144d08ab48f3db908961fc45
https://doi.org/10.1063/5.0077107

Characterization of micro-pixelated InGaP/AlGaInP quantum well structures

Autor: Bruno Masenelli, Philippe Ferrandis, Younes Boussadi, Jean-Paul Barnes, Névine Rochat, Christophe Licitra, Badhise Ben Bakir

Publikováno v: Light-Emitting Devices, Materials, and Applications XXIV
Light-Emitting Devices, Materials, and Applications XXIV, Feb 2020, San Francisco, United States. pp.11302, 1130221, ⟨10.1117/12.2544350⟩
Light-Emitting Devices, Materials, and Applications XXIV, Feb 2020, San Francisco, United States. pp.70, ⟨10.1117/12.2544350⟩

In this paper, we present a structural and optical study on micro-pixelated InGaP/AlGaInP quantum well structures with different pixel sizes down to 6 μm and a red emission at 636 nm. Temperature-dependent photoluminescence and cathodoluminescence c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42e6790166911c030420a67595970fef
https://hal.archives-ouvertes.fr/hal-03462256

Deep traps localization in AlGaN/GaN MIS-HEMTs by a comparative study using capacitance and current deep level transient spectroscopies

Autor: Gérard Guillot, Philippe Ferrandis, Georges Bremond, Erwan Morvan, Mariam El-Khatib

Publikováno v: Journal of Physics: Conference Series
Journal of Physics: Conference Series, IOP Publishing, 2019, 1190, pp.012013. ⟨10.1088/1742-6596/1190/1/012013⟩
Journal of Physics: Conference Series, 2019, 1190, pp.012013. ⟨10.1088/1742-6596/1190/1/012013⟩

In this study, deep traps in multiple-finger normally-off AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) were identified. The localization of these traps has been established by a comparative study using capaci

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::460994d34e4ee24b3f759aa88f189083
https://hal.archives-ouvertes.fr/hal-02494693

Study of deep traps in AlGaN/GaN high-electron mobility transistors by electrical characterization and simulation

Autor: Gérard Guillot, Philippe Ferrandis, Erwan Morvan, Marie-Anne Jaud, Matthew Charles, Mariam El-Khatib, Georges Bremond

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2019, 125 (3), pp.035702. ⟨10.1063/1.5055926⟩
Journal of Applied Physics, 2019, 125 (3), pp.035702. ⟨10.1063/1.5055926⟩

The localization of deep traps in normally-off AlGaN/GaN metal-oxide-semiconductor channel high-electron mobility transistors has been established by means of capacitance and current deep level transient spectroscopies (DLTS). Electrical simulations

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc934a07e09fb1d2ed567770310c2b5a
https://hal.archives-ouvertes.fr/hal-01998103