Zobrazeno 1 - 10
of 260
pro vyhledávání: '"Philippe Dollfus"'
Autor:
Remi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Antonin Zimmer, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre, Christel Buj, Guillaume Marchand, Jerome Saint-Martin, Marco Pala, Philippe Dollfus
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 584-592 (2022)
A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers’ trajectories, and on one-dimensional model
Externí odkaz:
https://doaj.org/article/b436d7bd8c1a4d1487a548ca5f9ce9cc
Autor:
Thibauld Cazimajou, Marco Pala, Jerome Saint-Martin, Remi Helleboid, Jeremy Grebot, Denis Rideau, Philippe Dollfus
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1098-1102 (2021)
The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The coupling of Poisson and Boltzmann transport equations allows us to go beyond the analysis of av
Externí odkaz:
https://doaj.org/article/4f43bde47a5d4c2a88d31a2dd2793d90
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract The enhancement of thermoelectric figure of merit ZT requires to either increase the power factor or reduce the phonon conductance, or even both. In graphene, the high phonon thermal conductivity is the main factor limiting the thermoelectri
Externí odkaz:
https://doaj.org/article/a26cbbf266bb4aceab5305371fef6470
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075212-075212-11 (2017)
The existing tight binding models can very well reproduce the ab initio band structure of a 2D graphene sheet. For graphene nano-ribbons (GNRs), the current sets of tight binding parameters can successfully describe the semi-conducting behavior of al
Externí odkaz:
https://doaj.org/article/2a96d313d9a540f59920dbff22ba51a1
Publikováno v:
Carbon. 204:601-611
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b155ff21614e06413a7a82a4ff85012
https://doi.org/10.1016/j.carbon.2022.12.059
https://doi.org/10.1016/j.carbon.2022.12.059
We present a first-principles model to study tunnel transistors based on van der Waals heterojunctions of 2D materials in the presence of dissipative mechanisms due to the electron-phonon interaction. To this purpose we employed a reduced basis set c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e7dd9e8ed055087fbd29824edb2495
https://doi.org/10.21203/rs.3.rs-2722573/v1
https://doi.org/10.21203/rs.3.rs-2722573/v1
Autor:
Jean Michel Sellier, Philippe Dollfus
Publikováno v:
Springer Handbook of Semiconductor Devices ISBN: 9783030798260
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0b44c45cb15b57f1062e7a0cdd57bac
https://doi.org/10.1007/978-3-030-79827-7_43
https://doi.org/10.1007/978-3-030-79827-7_43
Autor:
Rémi Helleboid, Denis Rideau, Jeremy Grebot, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩
Solid-State Electronics, 2022, 194, pp.108376. ⟨10.1016/j.sse.2022.108376⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f79e2200c3d844bf45b8dad48e91b18
https://cnrs.hal.science/hal-03793952/document
https://cnrs.hal.science/hal-03793952/document
Autor:
Rémi Helleboid, Denis Rideau, Isobel Nicholson, Jeremy Grebot, Bastien Mamdy, Gabriel Mugny, Marie Basset, Megan Agnew, Dominique Golanski, Sara Pellegrini, Jérôme Saint-Martin, Marco Pala, Philippe Dollfus
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, In press, ⟨10.1088/1361-6463/ac9b6a⟩
Journal of Physics D: Applied Physics, In press, ⟨10.1088/1361-6463/ac9b6a⟩
Journal of Physics D: Applied Physics, IOP Publishing, In press, ⟨10.1088/1361-6463/ac9b6a⟩
Journal of Physics D: Applied Physics, In press, ⟨10.1088/1361-6463/ac9b6a⟩
We present an efficient simulation method for electronic transport and avalanche in single-photon avalanche diodes (SPAD). Carrier transport is simulated in the real space using a particle Monte Carlo approach based on the Fokker–Planck point of vi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6045abc9528e8b67470bc031f7de0651
https://hal-cnrs.archives-ouvertes.fr/hal-03828806/document
https://hal-cnrs.archives-ouvertes.fr/hal-03828806/document
Autor:
Remi Helleboid, Philippe Dollfus, Jeremy Grebot, Thibauld Cazimajou, Jérôme Saint-Martin, Denis Rideau, Marco G. Pala
Publikováno v:
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3127013⟩
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1098-1102 (2021)
IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2021, pp.1-1. ⟨10.1109/JEDS.2021.3127013⟩
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1098-1102 (2021)
International audience; The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The coupling of Poisson and Boltzmann transport equations allows us to go b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e5c691a3ea326e779a54edfd9f33e5b
https://hal.archives-ouvertes.fr/hal-03439663
https://hal.archives-ouvertes.fr/hal-03439663