Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Philippe C. Adell"'
Autor:
Arthur F. Witulski, Gabor Karsai, Robert A. Reed, Tim Holman, En Xia Zhang, Kan Li, Jeffrey S. Kauppila, Philippe C. Adell, Andrew C. Daniel, M. W. Rony, Bernard G. Rax, Mahmud Reaz, Ronald D. Schrimpf
Publikováno v:
IEEE Transactions on Nuclear Science. 68:1465-1472
Analog-to-digital converters (ADCs) with different topologies respond differently to total ionizing dose (TID). A flexible behavioral modeling approach is proposed for system-level simulation of TID effects in successive-approximation-register (SAR)
Autor:
Carol A. Raymond, Rashied B. Amini, Philippe C. Adell, Rodney Anderson, Saptarshi Bandyopadhyay, Shyam Bhaskaran, Bjorn J. R. Davidsson, Frederic Esteve, Lorraine Fesq, Mark Haynes, Alain Herique, Reza Karimi, James T. Keane, Laurence Lorda, Patrick Michel, Robert Miller, Cedric Virmontois
Introduction: The close approach of asteroid (99942) Apophis on April 13, 2029 presents a unique opportunity to achieve breakthrough science and strengthen planetary defense goals. As discussed in [1], low-frequency (VHF) radar observations can probe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1189ccf6797a5b96709f0dda13a4b3e
https://doi.org/10.5194/epsc2022-770
https://doi.org/10.5194/epsc2022-770
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1332-1338
Total ionizing dose (TID) functional failure analysis on positive and negative low-dropout linear voltage regulators is performed. Two parts have been chosen for this article: the LP2953 positive regulator and the LT1175 negative regulator. Different
Autor:
Amit Kumar, Debashis Mandal, Karthik Pappu, Venkata N. K. Malladi, Philippe C. Adell, Bertan Bakkaloglu, Chao Fu, Navankur Beohar, Abhiram Mumma Reddy, Vivek Parasuram
Publikováno v:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC).
An automatic fully-digital pulse frequency modulation (PFM) to pulse width modulation (PWM) mode transition scheme for digitally controlled DC-DC buck converter is proposed in this paper. The meta-stability issues of time-based analog-to-digital conv
Autor:
Ronald D. Schrimpf, Gabor Karsai, A. Privat, Robert A. Reed, Nag Mahadevan, Jeffrey S. Kauppila, A. Daniel, Andrew L. Sternberg, Hugh J. Barnaby, Philippe C. Adell, H. Schone, A. F. Witulski
Publikováno v:
IEEE Transactions on Nuclear Science. 66:1634-1641
A simulation paradigm is proposed to examine the effects of transistor-level degradation produced by total ionizing dose (TID) on top-level system performance parameters. The approach is demonstrated on a command and data handling (C&DH) board for de
Autor:
Y. Wang, A. Privat, B. R. Rax, T. E. Buchheit, X. Han, Hugh J. Barnaby, Philippe C. Adell, P. W. Davis, B. S. Tolleson
Publikováno v:
IEEE Transactions on Nuclear Science. 66:190-198
A multiscale modeling platform that supports the “virtual” qualification of commercial-off-the-shelf parts is presented. The multiscale approach is divided into two modules. The first module generates information related to the bipolar junction t
Publikováno v:
IEEE Transactions on Nuclear Science. 65:896-902
A radiation-tolerant digital multiphase current-mode hysteretic point-of-load regulator fabricated on a commercial 180-nm CMOS process is presented. Experiments and simulations are used to demonstrate its single-event immunity and its total-dose tole
Publikováno v:
IEEE Journal of Solid-State Circuits. 52:3081-3094
A four-phase, quasi-current-mode hysteretic buck converter with digital frequency synchronization, online comparator offset-calibration and, digital current-sharing control is presented. The switching frequency of the hysteretic converter is digitall
Publikováno v:
2019 IEEE Radiation Effects Data Workshop.
SEE test results are presented for the Snapdragon 801, 835 and 845 processors. The focus is on the performance of the processors under a normal work environment. Testing was performed to get an understanding of the crash and bit error performance. In
Publikováno v:
Microelectronics Reliability. 113:113947
Temperature variation on board can have a significant impact on electronic circuit parameters. In this paper, we investigate and model how both irradiated NPN and PNP-Bipolar Junction Transistors (BJTs) at room temperature respond electrically to tem