Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Philippe Bove"'
Autor:
Sumin Choi, David J. Rogers, Eric V. Sandana, Philippe Bove, Ferechteh H. Teherani, Christian Nenstiel, Axel Hoffmann, Ryan McClintock, Manijeh Razeghi, David Look, Angus Gentle, Matthew R. Phillips, Cuong Ton-That
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-7 (2017)
Abstract We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the sam
Externí odkaz:
https://doaj.org/article/cc1a67bbc1e2482489daa6b9d089a648
Autor:
Mustapha Meftah, Luc Damé, Philippe Keckhut, Slimane Bekki, Alain Sarkissian, Alain Hauchecorne, Emmanuel Bertran, Jean-Paul Carta, David Rogers, Sadok Abbaki, Christophe Dufour, Pierre Gilbert, Laurent Lapauw, André-Jean Vieau, Xavier Arrateig, Nicolas Muscat, Philippe Bove, Éric Sandana, Ferechteh Teherani, Tong Li, Gilbert Pradel, Michel Mahé, Christophe Mercier, Agne Paskeviciute, Kevin Segura, Alicia Berciano Alba, Ahmed Aboulila, Loren Chang, Amal Chandran, Pierre-Richard Dahoo, Alain Bui
Publikováno v:
Remote Sensing, Vol 12, Iss 1, p 92 (2019)
The UltraViolet and infrared Sensors at high Quantum efficiency onboard a small SATellite (UVSQ-SAT) mission aims to demonstrate pioneering technologies for broadband measurement of the Earth’s radiation budget (ERB) and solar spectral irradiance (
Externí odkaz:
https://doaj.org/article/0ef91fe69f564067ad4fdb2e0e760d9c
Autor:
Junhee Lee, Lakshay Gautam, Ferechteh H. Teherani, Eric V. Sandana, Philippe Bove, David J. Rogers, Manijeh Razeghi
Publikováno v:
physica status solidi (a). 220
Autor:
Muhammad Zakria, David J. Rogers, Joseph Scola, Liangchen Zhu, Mark Lockrey, Philippe Bove, Eric V. Sandana, Ferechteh H. Teherani, Matthew R. Phillips, Cuong Ton-That
Publikováno v:
Physical Review Materials. 6
We report on the polarity-dependent excitonic emission at the interface in MgZnO/ZnO heterostructures grown on both polar and nonpolar ZnO single-crystal substrates. Structural and morphological analyses confirm that the heterostructures grow homoepi
Autor:
Luc Damé, Halima Ghorbel, Mustapha Meftah, Xavier Arrateig, Pierre Gilbert, Pierre Maso, David Bolsée, Nuno Pereira, David J. Rogers, Philippe Bove, Vinod E. Sandana, Féréchteh H. Teherani
Publikováno v:
Oxide-based Materials and Devices XIII.
Autor:
Thi-Huong Dang, Marcin Konczykowski, Viatcheslav I. Safarov, Elie Hammou, Lucia Romero Vega, Nadège Ollier, Romain Grasset, Antonino Alessi, Henri-Jean M. Drouhin, Henri Jaffrès, Valery Y. Davydov, Agnieszka Wołoś, David J. Rogers, Vinod E. Sandana, Philippe Bove, Féréchteh H. Teherani
Publikováno v:
Oxide-based Materials and Devices XIII
Oxide-based Materials and Devices XIII, Jan 2022, San Francisco, France. pp.60, ⟨10.1117/12.2622559⟩
Oxide-based Materials and Devices XIII, Jan 2022, San Francisco, France. pp.60, ⟨10.1117/12.2622559⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf5564e9e30c7bf1dea293e2d58b9c1b
https://hal.science/hal-03798630
https://hal.science/hal-03798630
Autor:
Thomas Maroutian, Ferechteh H. Teherani, Manijeh Razeghi, V. E. Sandana, Philippe Lecoeur, Philippe Bove, David J. Rogers
Publikováno v:
Oxide-based Materials and Devices XII.
275 nm-thick Yttria-stabilised zirconia (YSZ) layers were grown on 240 nm-thick epitaxial (0002)-oriented ZnO buffer layers on c-sapphire substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) studies revealed high quality epitaxial gro
Publikováno v:
UV and Higher Energy Photonics: From Materials to Applications 2021.
Recently, there has been a surge in interest for the ultra wide bandgap (Eg ~ 4.9 eV) semiconductor gallium oxide (Ga2O3). A key driver for this boom is that single crystal wide area bulk β-Ga2O3 substrates have become commercially available and a v
Autor:
David J. Rogers, Axel Courtois, Ferechteh H. Teherani, Vinod E. Sandana, Philippe Bove, Xavier Arrateig, L. Damé, P. Maso, M. Meftah, W. El Huni, Y. Sama, H. Bouhnane, S. Gautier, A. Ougazzaden, Manijeh Razeghi
Publikováno v:
Proc. SPIE 11687, Oxide-based Materials and Devices XII
Proc. SPIE 11687, Oxide-based Materials and Devices XII, Mar 2021, OnLine, United States. pp.116872D, ⟨10.1117/12.2596194⟩
Proc. SPIE 11687, Oxide-based Materials and Devices XII, Mar 2021, OnLine, United States. pp.116872D, ⟨10.1117/12.2596194⟩
International audience; Ga2O3 layers were grown on c-sapphire substrates by pulsed laser deposition. Optical transmission spectra were coherent with a bandgap engineering from 4.9 to 6.2 eV controlled via the growth conditions. X-ray diffraction reve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f98a7dd99400a38b621d15588737aff
https://hal-insu.archives-ouvertes.fr/insu-03352076
https://hal-insu.archives-ouvertes.fr/insu-03352076
Autor:
E. Chikoidze, Philippe Bove, Curtis P. Irvine, Ferechteh H. Teherani, Yves Dumont, David J. Rogers, Eric V. Sandana, Cuong Ton-That, Muhammad Zakria, Matthew R. Phillips, Thanh Tung Huynh
Publikováno v:
Oxide-based Materials and Devices XII.
We report the characteristics of luminescence bands in beta-Ga2O3 thin films and single crystals. The dominant UV emission at 3.4 eV exhibits strong thermal quenching but its peak shape remains unchanged. The blue and green bands, attributed to defec