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Autor:
Stéphane Piotrowicz, N. Michel, M. Oualli, Eric Chartier, Jean-Claude Jacquet, O. Patard, Cedric Lacam, C. Potier, Christian Dua, Piero Gamarra, Philippe Altuntas, Sylvain Delage
Publikováno v:
International Journal of Microwave and Wireless Technologies. 10:39-46
This paper presents performances achieved with InAlGaN/GaN HEMTs with 0.15 µm gate length on SiC substrate. Technology Computer Aided Design simulations were used to optimize the heterostructure. Special attention was paid to the design of the buffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4d53d3fc2da769eebf2be3530bb506
https://doi.org/10.1017/s175907871700112x
https://doi.org/10.1017/s175907871700112x
