Výsledky vyhledávání - "Philippe, Kowalczyk"

Growth mechanism of highly oriented layered Sb 2 Te 3 thin films on various materials

Autor: Pierre Noé, C. Sabbione, Damien Térébénec, Nicolas Bernier, Cristian Mocuta, Françoise Hippert, Philippe Kowalczyk, Xavier Zucchi

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (15), pp.154003. ⟨10.1088/1361-6463/ab6b9a⟩

Sb2Te3 is a layered material with outstanding properties leading to applications in interfacial phase change memories, spintronic and thermoelectric devices. For successful integration in devices, controlling the orientation of the atomic planes of S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b075799264b204d5cdd2777938b8a683
https://hal.univ-grenoble-alpes.fr/hal-03127753

Zobrazit plný text záznamu

New insights into thermomechanical behavior of GeTe thin films during crystallization

Autor: S. Escoubas, Mathieu Bernard, Cristian Mocuta, N. Burle, Pierre Noé, Olivier P. Thomas, Rebbeca R. Chahine, M. Amara, Philippe Kowalczyk, C. Guichet, Magali Putero, Marion Gallard, Marie-Ingrid Richard

Publikováno v: Acta Materialia
Acta Materialia, 2020, 191, pp.60-69. ⟨10.1016/j.actamat.2020.04.001⟩
Acta Materialia, Elsevier, 2020, 191, pp.60-69. ⟨10.1016/j.actamat.2020.04.001⟩

International audience; In this work, we reexamine Ge rejection in Ge-rich GeTe thin films with a slight deviation from stoichiometry using a unique combination of in situ measurements: curvature and x-ray diffraction as well as electrical resistance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12fc61580c49e4e52e0c057ceeb9b7f1
https://hal.science/hal-02903073

Zobrazit plný text záznamu

Local structure of [(GeTe)(2)/(Sb2Te3)(m)](n)super-lattices by x-ray absorption spectroscopy

Autor: Philippe Kowalczyk, Francesco d'Acapito, C. Sabbione, Jean-Yves Raty, Pierre Noé, Françoise Hippert

Publikováno v: Journal of physics. D, Applied physics
53 (2020). doi:10.1088/1361-6463/ab98c1
info:cnr-pdr/source/autori:D'Acapito, F.; Kowalczyk, P.; Raty, J-Y; Sabbione, C.; Hippert, F.; Noe, P./titolo:Local structure of [(GeTe)(2)%2F(Sb2Te3)(m)](n)super-lattices by x-ray absorption spectroscopy/doi:10.1088%2F1361-6463%2Fab98c1/rivista:Journal of physics. D, Applied physics (Print)/anno:2020/pagina_da:/pagina_a:/intervallo_pagine:/volume:53
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (40), pp.404002. ⟨10.1088/1361-6463/ab98c1⟩

Herein, the local structure of [(GeTe)(2)/(Sb2Te3)(m)](n)chalcogenide super-lattices (SLs), which are at the basis of emerging interfacial Phase-Change Memory (iPCM), is studied by x-ray absoprtion spectroscopy at the Ge-K edge. The quantitative anal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f439c86ecccd0d1c32d50af92d00cf2
http://www.cnr.it/prodotto/i/435679

Zobrazit plný text záznamu

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb

Autor: Philippe, Kowalczyk, Françoise, Hippert, Nicolas, Bernier, Cristian, Mocuta, Chiara, Sabbione, Walter, Batista-Pessoa, Pierre, Noé

Publikováno v: Small (Weinheim an der Bergstrasse, Germany). 14(24)

Van der Waals layered GeTe/Sb

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::9184b223aea60aff28cb836047e8af21
https://pubmed.ncbi.nlm.nih.gov/29761644

Zobrazit plný text záznamu

Innovative GeS2/Sb2Te3 based phase change memory for low power applications

Autor: N. Castellani, Nicolas Bernier, Luca Perniola, Anthonin Verdy, Mathieu Bernard, Veronique Sousa, Guillaume Bourgeois, Serge Blonkowski, Sophie Chevalliez, Philippe Kowalczyk, Gabriele Navarro, J. Kluge, Pierre Noé

Publikováno v: NVMTS

In this paper, we analyze the electrical performance of a novel Phase-Change Memory (PCM) device based on GeS 2 /Sb 2 Te 3 composition (GSST). Through physico-chemical analysis and electrical characterization we demonstrate a great reduction of the R

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::159552dbef9ecc060d8c36b0bd006c47
https://doi.org/10.1109/nvmts.2017.8171305

Zobrazit plný text záznamu

Impact of Stoichiometry on the Structure of van der Waals Layered GeTe/Sb2 Te3 Superlattices Used in Interfacial Phase-Change Memory (iPCM) Devices

Autor: C. Sabbione, Nicolas Bernier, Philippe Kowalczyk, Françoise Hippert, Walter Batista-Pessoa, Cristian Mocuta, Pierre Noé

Publikováno v: Small
Small, 2018, 14 (24), pp.1704514. ⟨10.1002/smll.201704514⟩
Small, Wiley-VCH Verlag, 2018, 14 (24), pp.1704514. ⟨10.1002/smll.201704514⟩

International audience; Van der Waals layered GeTe/Sb2Te3 superlattices (SLs) have demonstrated outstanding performances for use in resistive memories in so-called interfacial phase-change memory (iPCM) devices. GeTe/Sb2Te3 SLs are made by periodical

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9911d93c063569414ddb27926448c806
https://doi.org/10.1002/smll.201704514

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání