Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Philipp Studer"'
Autor:
David R. Bowler, Philipp Studer, Kitiphat Sinthiptharakoon, Andrew J. Fisher, Neil J. Curson, Veronika Brázdová, Adam Rahnejat, Steven R. Schofield
Publikováno v:
Physical Review B. 95
Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding new applica
Autor:
Martha Liley, Janos Vörös, Philipp Studer, Philippe Niedermann, Tomaso Zambelli, André Meister, Michael Gabi, Harry Heinzelmann, Pascal Behr, Jérôme Polesel-Maris, Joanna Przybylska
Publikováno v:
Microelectronic Engineering. 86:1481-1484
A microfabricated nanoscale dispenser (NADIS) based on an atomic force microscopy probe has been developed to enable the delivery of ultrasmall amounts of liquid material with a high lateral accuracy in liquid or gaseous surroundings. The dispenser c
Autor:
Kitiphat, Sinthiptharakoon, Steven R, Schofield, Philipp, Studer, Veronika, Brázdová, Cyrus F, Hirjibehedin, David R, Bowler, Neil J, Curson
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 26(1)
We study subsurface arsenic dopants in a hydrogen-terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant-related features that fall into two classes, which we call As1 and As2
Autor:
PM Paul Koenraad, Michael E. Flatté, Mohammad Reza Mahani, Steven R. Schofield, Jian-Ming Tang, A. Yu. Silov, Cyrus F. Hirjibehedin, Neil J. Curson, Carlo M. Canali, Philipp Studer, M Murat Bozkurt
Publikováno v:
Physical Review B, 88(20):205203, 205203-1/11. American Physical Society
We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the accep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82890089a685afa4f707d254340567f6
Autor:
David R. Bowler, Steven R. Schofield, Philipp Studer, Neil J. Curson, Veronika Brázdová, Cyrus F. Hirjibehedin
Publikováno v:
ACS nano. 6(12)
We report that solitary bismuth and antimony atoms, incorporated at Si(111) surfaces, induce either positive or negative charge states depending on the site of the surface reconstruction in which they are located. This is in stark contrast to the hyd
Autor:
Steven R. Schofield, Neil J. Curson, Philipp Studer, Cyrus F. Hirjibehedin, Greg Lever, David R. Bowler
Publikováno v:
Physical Review B. 84
Strain induced by antiphase boundaries (APBs) in the Si(111) 2 x 1 surface is investigated using scanning tunneling microscopy (STM), laterally resolved scanning tunneling spectroscopy (STS), and density functional theory (DFT). We determine the stru
A novel microwell chip is developed that can be used to detect protein binding in a liquid environment, together with a liquid handling system that allows the performance of assays with picoliter volumes. A PDMS well structure is cast on a planar opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9d8dd3eae56a1a99918a389ec166964
https://doi.org/10.5167/uzh-26341
https://doi.org/10.5167/uzh-26341
Publikováno v:
Applied Physics Letters. 102:012107
The atomic scale structural and electronic characteristics of a silicon sample implanted with bismuth atoms are investigated using cross-sectional scanning tunneling microscopy (XSTM) and scanning tunneling spectroscopy (STS). We demonstrate that cle
Autor:
André Meister, Michael Gabi, Pascal Behr, Philipp Studer, János Vörös, Philippe Niedermann, Joanna Bitterli, Jérôme Polesel-Maris, Martha Liley, Harry Heinzelmann, Tomaso Zambelli
Publikováno v:
Nano Letters; Jun2009, Vol. 9 Issue 6, p2501-2507, 7p