Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Philipp Menz"'
Autor:
John D. Cressler, Anup P. Omprakash, Hanbin Ying, Uppili S. Raghunathan, Tikurete G. Bantu, Hiroshi Yasuda, Brian R. Wier, Philipp Menz, Rafael Perez Martinez
Publikováno v:
IEEE Transactions on Electron Devices. 65:2430-2438
We investigate high current stress mechanisms and demonstrate how Auger hot carriers can damage both oxide interfaces and polysilicon regions of the emitter and base. A new current gain enhancement (CGE) effect is proposed, which involves hot-carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93f61f37494e48e4ddd68f351224c36
https://doi.org/10.1109/ted.2018.2829184
https://doi.org/10.1109/ted.2018.2829184
Autor:
Philipp Menzel, Mandy Vogel, Sean Austin, Norbert Sprenger, Nico Grafe, Cornelia Hilbert, Anne Jurkutat, Wieland Kiess, Aristea Binia
Publikováno v:
BMC Pediatrics, Vol 21, Iss 1, Pp 1-11 (2021)
Abstract Background The relationship between human milk oligosaccharides (HMO) and child growth has been investigated only insufficiently with ambiguous results. Therefore, this study examines potential influencing factors of HMO concentrations and h
Externí odkaz:
https://doaj.org/article/d6fcca130f4e48a0b21014dffedb543b
Autor:
John D. Cressler, Uppili S. Raghunathan, Hiroshi Yasuda, Philipp Menz, Partha S. Chakraborty, Brian R. Wier
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We study the accumulated degradation of SiGe HBTs under time-dependent mixed-mode stress using a new physics-based TCAD degradation model that simulates hot carrier generation and propagation to oxide interfaces, resulting in trap formation. We calib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2eff87c9d7a6801beec2e1b64507ca3
https://doi.org/10.1109/bctm.2013.6798170
https://doi.org/10.1109/bctm.2013.6798170
Considerations for forward active mode reliability in an advanced hetero-junction bipolar transistor
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
The implementation of safe operating area (SOA) is discussed in this paper to quantify electrical, thermal, and Hot Carrier (HC) limits for a SiGe hetero-junction bipolar transistor (HBT) in a forward active mode. An electrical limit should be constr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed4aa24d83726359cc0abdaf6e6bb594
https://doi.org/10.1109/bctm.2012.6352659
https://doi.org/10.1109/bctm.2012.6352659