Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Philipp Latyshev"'
Autor:
Vladislav Voronenkov, Natalia Bochkareva, Ruslan Gorbunov, Andrey Zubrilov, Viktor Kogotkov, Philipp Latyshev, Yuri Lelikov, Andrey Leonidov, Yuri Shreter
Publikováno v:
Results in Physics, Vol 13, Iss , Pp - (2019)
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial st
Externí odkaz:
https://doaj.org/article/416d327c838c4593a4528217ab9158e5
Autor:
Horst P. Strunk, N. I. Bochkareva, Y. T. Rebane, Y. G. Shreter, U. W. Popp, Yuri Lelikov, A. I. Tsyuk, Philipp Latyshev, M. Strafela, Andrey Zubrilov, Vladislav Voronenkov, R. I. Gorbunov
GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2d385461d681c81c7c5cce4e4f8e0ea
http://arxiv.org/abs/1902.07164
http://arxiv.org/abs/1902.07164
Autor:
Philipp Latyshev, Alexander Tsyuk, Ruslan Gorbunov, Vladislav Voronenkov, Andrey Zubrilov, Y. G. Shreter, Natalia Bochkareva, Yuri Lelikov, Y.T. Rebane
GaN films with thicknesses up to 3 mm were grown in two custom-made halide vapor phase epitaxy (HVPE) reactors. V-shaped defects (pits) with densities from 1 to 100 cm-2 were found on the surfaces of the films. Origins of pit formation and the proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::486113a34a1750fd74f31c0e94e2952d
http://arxiv.org/abs/1902.06465
http://arxiv.org/abs/1902.06465
Autor:
Andrey Leonidov, Natalia Bochkareva, Philipp Latyshev, Yuri Lelikov, Y. G. Shreter, Ruslan Gorbunov, Vladislav Voronenkov, V. S. Kogotkov, Andrey Zubrilov
A free-standing bulk gallium nitride layer with a thickness of 365 $\mu$m and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon buffer layer. The carbon buffer layer was deposited by thermal decompo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86b20b6bddb54ca2e7f9fb564e38c44c
http://arxiv.org/abs/1902.04672
http://arxiv.org/abs/1902.04672
Autor:
Yuri Lelikov, Andrey Zubrilov, Natalia Bochkareva, Y. G. Shreter, Vladislav Voronenkov, Ruslan Gorbunov, Philipp Latyshev
Publikováno v:
physica status solidi (a). 217:1900629
An HVPE reactor for the growth of bulk GaN crystals with a diameter of 50 mm was developed. Growth rate non-uniformity of 1% was achieved using an axisymmetric vertical gas injector with stagnation point flow. Chemically-resistant refractory material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e80a776738f13b77dec697e070728df9
https://doi.org/10.1002/pssa.201900629
https://doi.org/10.1002/pssa.201900629
Autor:
V. S. Kogotkov, Andrey Zubrilov, Andrey Leonidov, Yuri Lelikov, Philipp Latyshev, Natalia Bochkareva, Ruslan Gorbunov, Y. G. Shreter, Vladislav Voronenkov
Publikováno v:
Results in Physics, Vol 13, Iss, Pp-(2019)
A femtosecond laser focused inside bulk GaN was used to slice a thin GaN film with an epitaxial device structure from a bulk GaN substrate. The demonstrated laser slicing lift-off process did not require any special release layers in the epitaxial st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aad0474d0615706b99ca7e8adae9411
https://doi.org/10.1016/j.rinp.2019.102233
https://doi.org/10.1016/j.rinp.2019.102233