Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Philipp Jaschinsky"'
Autor:
Philipp Jaschinsky, Peter Kuecher, K. Schulze, Christoph Hohle, Jens-Wolfram Erben, Stefan E. Schulz, Martin Freitag, Kang-Hoon Choi, Thomas Gessner, Katja Steidel, Manuela Gutsch, F. Blaschta
Publikováno v:
Microelectronic Engineering. 88:1978-1981
To realize fast and efficient integrated circuits the interconnect system gains an increasing importance. In particular, this is the case for logic and processor circuits with up to 12 metallization layers. In order to optimize this technology and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efc2ce94a53e63f5c226fff942d91eeb
https://doi.org/10.1016/j.mee.2011.02.035
https://doi.org/10.1016/j.mee.2011.02.035
Publikováno v:
Microelectronic Engineering. 86:539-543
Along with the introduction of the 32nm technology node in the next years, the methods for correcting the proximity effect face certain limitations of measurement performance and the underlying point spread function based models themselves. To extend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4634143f9ce3b5a394e92cdc847cc0d
https://doi.org/10.1016/j.mee.2008.12.053
https://doi.org/10.1016/j.mee.2008.12.053
Autor:
Jan Klikovits, Martin Freitag, Jan Paul, Manuela Gutsch, Frank Kahlenberg, Xaver Thrun, Philipp Jaschinsky, Christoph Hohle, Kang-Hoon Choi, Christof Klein, Matthias Rudolph
Publikováno v:
Alternative Lithographic Technologies IV.
Using electron beam direct write (EBDW) as a complementary approach together with standard optical lithography at 193nm or EUV wavelength has been proposed only lately and might be a reasonable solution for low volume CMOS manufacturing and special a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c13d074c2eced04503655bf4c37ccdf
https://doi.org/10.1117/12.916386
https://doi.org/10.1117/12.916386
Autor:
Philipp Jaschinsky, Ulrich Klostermann, Lars Bomholt, Holger Sailer, Hans-Jürgen Stock, Stephan Martens, Manuela Gutsch, Martin Schulz, Wolfgang Hoppe, Kang-Hoon Choi
Publikováno v:
SPIE Proceedings.
With the constantly improving maturity of e-beam direct write exposure tools and processes for applications in high volume manufacturing, new challenges with regard to speed, throughput, correction and verification have to be faced. One objective of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c3203838882a65808bc8a3196985d0
https://doi.org/10.1117/12.866695
https://doi.org/10.1117/12.866695
Autor:
Katja Keil, Martin Freitag, Philipp Jaschinsky, Christoph Hohle, Manuela Gutsch, Kang-Hoon Choi
Publikováno v:
SPIE Proceedings.
For shortening the writing time, especially in shaped Electron Beam Direct Writing (EBDW), it is crucial to reduce the number of shapes and the coverage of layout for exposure. The determination of conventional or reversed image printing according to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::596c377c27129f2ca135721d19483d66
https://doi.org/10.1117/12.846514
https://doi.org/10.1117/12.846514
Autor:
Philipp Jaschinsky, Marc Hauptmann, Katja Keil, Kang-Hoon Choi, Manuela Gutsch, Christoph Hohle, Martin Freitag
Publikováno v:
SPIE Proceedings.
In electron beam lithography, the electron scattering and the corresponding proximity effect highly influence the feature resolution. Especially for sub-100 nm features a compensation for this effect is needed. There are several methods of determinat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39d663cbdab73b6d5184ca7243ebbfc
https://doi.org/10.1117/12.864315
https://doi.org/10.1117/12.864315
Autor:
W. Piller, J. T. Nogatch, T. Bejdak, Christoph Hohle, Jan Klikovits, Elmar Platzgummer, Christof Klein, A. Zepka, W. Klingler, F. Thrum, M. Witt, Johannes Kretz, V. Kolarik, Florian Letzkus, Hans Loeschner, W. Pilz, Mathias Irmscher, Jörg Butschke, Philipp Jaschinsky, P. Dolezel
Publikováno v:
Alternative Lithographic Technologies.
Projection Mask-Less Lithography (PML2) is a potentially cost-effective multi electron-beam solution for the 22 nm half-pitch node and beyond. PML2 is targeted on using hundreds of thousands of individually addressable electron-beams working in paral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c772f0a1df1e0f142a32598e2058742
https://doi.org/10.1117/12.813670
https://doi.org/10.1117/12.813670
Autor:
Christoph Hohle, Arie Jeffrey Den Boef, Marc Hauptmann, Philipp Jaschinsky, Valeriano Ferreras Paz, Uwe Seifert, Johannes Kretz, Manfred Mört, Kang-Hoon Choi, Katja Keil, Laszlo Szikszai, F. Thrum
Publikováno v:
Alternative Lithographic Technologies.
Electron beam direct write (EBDW) can be utilized for developing metrology methods for future technology nodes. Due to its advantage of high resolution and flexibility combined with suitable throughput capability, variable-shaped E-Beam lithography i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ab78c6b2d2bbc1b8ef6ad2cd45cf71
https://doi.org/10.1117/12.814181
https://doi.org/10.1117/12.814181
Autor:
Katja Keil, Johannes Kretz, R. Zimmermann, M. Tesauro, K.-H. Choi, F. Thrum, Christoph Hohle, Philipp Jaschinsky, R. Schneider
Publikováno v:
25th European Mask and Lithography Conference.
Because of mask cost reduction, electron beam direct write (EBDW) is implemented for special applications such as rapid prototyping or small volume production in semiconductor industry. One of the most promising applications for EBDW is design verifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9a918f99ac47d4c7df85cdeb85fe3b1
https://doi.org/10.1117/12.835206
https://doi.org/10.1117/12.835206
Publikováno v:
Review of scientific instruments 77, 093701 (2006). doi:10.1063/1.2336112
A combination of a double-tip scanning tunneling microscope with a scanning electron microscope in ultrahigh vacuum environment is presented. The compact beetle-type design made it possible to integrate two independently driven scanning tunneling mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06bc992de16783df502d68d9379dd17e
https://hdl.handle.net/2128/2170
https://hdl.handle.net/2128/2170
