Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Philipp Gribisch"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:2408-2414
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aac4cecef360f6f3f3c5cdecb0a1ed1
https://doi.org/10.1109/ted.2023.3263154
https://doi.org/10.1109/ted.2023.3263154
Autor:
Sami Suihkonen, Philipp Gribisch, Dipankar Saha, Swaroop Ganguly, Sreenadh Surapaneni, Apurba Laha, Jori Lemettinen, H. J. Osten, Ravindra Singh Pokharia, Dhiman Nag, Ritam Sarkar, Bhanu B. Upadhyay, Swagata Bhunia
Publikováno v:
IEEE Transactions on Electron Devices. 68:2653-2660
In this article, we report the temperature-dependent transistor characteristic of Epi-Gd2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and compare its properties with that of AlGaN/GaN metal-Schottky high electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e1e3740427c05a4c95a0b5e9c7b1a80
https://doi.org/10.1109/ted.2021.3070838
https://doi.org/10.1109/ted.2021.3070838
Publikováno v:
ECS Transactions. 93:57-60
Gadolinium oxide (Gd2O3) was grown at low temperatures (250 °C) on Si(001) using molecular beam epitaxy. The crystal structure was investigated with X-ray diffraction experiments, where the crystal structure changes from cubic to monoclinic dependin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3906f9994f05bd2c2423f1297b32ca7a
https://doi.org/10.1149/09301.0057ecst
https://doi.org/10.1149/09301.0057ecst
Publikováno v:
Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials. 75:59-70
The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (Gd2O3) on silicon (001) has been investigated. Gd2O3 was grown at low (250°C) and high (850°C) temperatures with different oxyg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5767fa013f1fef713c7a51322dda61
https://doi.org/10.1107/s2052520618017869
https://doi.org/10.1107/s2052520618017869
Autor:
Philipp, Gribisch, Andreas, Fissel
Publikováno v:
RSC advances. 11(29)
The structural and morphological properties of gadolinium oxide (Gd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a4f5ce268007fad52a2a8f0163dd05d2
https://pubmed.ncbi.nlm.nih.gov/35480161
https://pubmed.ncbi.nlm.nih.gov/35480161
Autor:
Philipp Gribisch, Andreas Fissel
Publikováno v:
Semiconductor Science and Technology. 36:115016
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2d1989c4fa974fd336c8c022bda59ca
https://doi.org/10.1088/1361-6641/ac2962
https://doi.org/10.1088/1361-6641/ac2962
Autor:
Krista Khiangte Roluahpuia, H. J. Osten, Udayan Ganguly, Amita Rawat, Apurba Laha, Philipp Gribisch, Suddhasatta Mahapatra
Publikováno v:
Thin Solid Films. 731:138732
Germanium-on-insulator (GeOI) technology is a potential-alternative to the bulk-silicon based devices for radio-frequency (RF), and complementary metal oxide semiconductor applications at advanced technology nodes. A thin germanium channel is the key
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7c20d5562ebcba76403a1a1d62ba968
https://doi.org/10.1016/j.tsf.2021.138732
https://doi.org/10.1016/j.tsf.2021.138732
Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
Autor:
Apurba Laha, Swaroop Ganguly, H. J. Osten, Dipankar Saha, Ritam Sarkar, Dhiman Nag, Christoffer Kauppinen, B. C. Barik, K. Das Gupta, Iurii Kim, Philipp Gribisch, Jori Lemettinen, Swagata Bhunia, Sami Suihkonen
In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7928126591a8a7965aefbd49476fe33f
https://aaltodoc.aalto.fi/handle/123456789/40006
https://aaltodoc.aalto.fi/handle/123456789/40006
Influence of nanostructure formation on the crystal structure and morphology of epitaxially grown Gd
Publikováno v:
Acta crystallographica Section B, Structural science, crystal engineering and materials. 75(Pt 1)
The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (Gd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::715b4d64340bcd40bf848b10a6789959
https://pubmed.ncbi.nlm.nih.gov/32830779
https://pubmed.ncbi.nlm.nih.gov/32830779
Publikováno v:
Frontiers of Materials Science. 9:141-146
The step-flow growth condition of Si on Si(111) near the (7×7)-“1×1” surface phase transition temperature T C are analyzed within the framework of Burton-Cabrera-Frank theory. In particular, coexistence of both surface phases well below T C and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ca19179a942b53deadbca7a932ea874
https://doi.org/10.1007/s11706-015-0282-z
https://doi.org/10.1007/s11706-015-0282-z