Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Philipp, Staudinger"'
Autor:
Mohammed Zeghouane, Gabin Grégoire, Emmanuel Chereau, Geoffrey Avit, Philipp Staudinger, Kirsten E. Moselund, Heinz Schmid, Pierre-Marie Coulon, Philip Shields, Nebile Isik Goktas, Ray R. LaPierre, Agnès Trassoudaine, Yamina André, Evelyne Gil
Publikováno v:
Crystal Growth & Design. 23:2120-2127
Autor:
Emmanuel Chereau, Vladimir G. Dubrovskii, Gabin Grégoire, Geoffrey Avit, Philipp Staudinger, Heinz Schmid, Catherine Bougerol, Pierre-Marie Coulon, Philip A. Shields, Agnès Trassoudaine, Evelyne Gil, Ray R. LaPierre, Yamina André
Publikováno v:
Crystal Growth & Design.
Publikováno v:
The Journal of Physical Chemistry. C, Nanomaterials and Interfaces
The performance of nanoscale electronic and photonic devices critically depends on the size and geometry and may significantly differ from those of their bulk counterparts. Along with confinement effects, the inherently high surface-to-volume ratio o
Autor:
Evelyne Gil, Eric Tournié, Kirsten E. Moselund, Ray R. LaPierre, Curtis Goosney, Nebile Isik Goktas, Yamina André, Heinz Schmid, Thierry Taliercio, Gabin Grégoire, Philipp Staudinger, Mohammed Zeghouane, Agnès Trassoudaine
Publikováno v:
Crystal Growth & Design
Crystal Growth & Design, American Chemical Society, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, American Chemical Society, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
Crystal Growth & Design, 2021, 21 (9), pp.5158-5163. ⟨10.1021/acs.cgd.1c00518⟩
International audience; We report on the selective area growth of InAs nanowires (NWs) by the catalyst-free vapor−solid method. Well-ordered InAs NWs were grown on GaAs(111)B and Si(111) substrates patterned with a dielectric mask using hydride vap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e861644e6f89d10533d101bbebe8effb
https://hal.archives-ouvertes.fr/hal-03336861
https://hal.archives-ouvertes.fr/hal-03336861
Autor:
M. F. Ritter, Heike Riel, Philipp Staudinger, Marilyne Sousa, M. A. Mueed, Aakash Pushp, Heinz Schmid, D. Z. Haxell, Fabrizio Nichele, Benjamin Madon
Publikováno v:
Nano Letters
Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonst
Autor:
Nadine, Gächter, Fabian, Könemann, Masiar, Sistani, Maximilian G, Bartmann, Marilyne, Sousa, Philipp, Staudinger, Alois, Lugstein, Bernd, Gotsmann
Publikováno v:
Nanoscale. 12(40)
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168 nm length features atomically sharp interfaces to the aluminium wires and is s
Autor:
Masiar Sistani, Alois Lugstein, Bernd Gotsmann, Nadine Gächter, Marilyne Sousa, Philipp Staudinger, Maximilian G. Bartmann, Fabian Könemann
Publikováno v:
Nanoscale
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168 nm length features atomically sharp interfaces to the aluminium wires and is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::21ca6bd635afd732c20df95b4fa80e25
https://zenodo.org/record/6802562
https://zenodo.org/record/6802562
Autor:
N. Vico Trivino, Daniele Caimi, Preksha Tiwari, Marilyne Sousa, Qian Ding, Andreas Schenk, Kirsten E. Moselund, Heinz Schmid, Philipp Staudinger, Svenja Mauthe, Pengyan Wen, Markus Scherrer
Publikováno v:
2020 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
In the present talk we discuss the development of the epitaxial technique Template-Assisted Selective Epitaxy (TASE)and its application for the monolithic integration of scaled III - V active photonic devices on silicon. A unique advantage of TASE fo
Autor:
Masiar Sistani, Michael S. Seifner, Alois Lugstein, Raphael Böckle, Sven Barth, Philipp Staudinger
Publikováno v:
Nanotechnology. 31(44)
Despite being known of for decades, the actual realization of memory devices based on the memristive effect is progressing slowly, due to processing requirements and the need for exotic materials which are not compatible with today’s complementary-
Autor:
Kirsten E. Moselund, N. Vico Trivino, Heinz Schmid, Marilyne Sousa, Preksha Tiwari, Svenja Mauthe, Yannick Baumgartner, Philipp Staudinger, Markus Scherrer
Publikováno v:
Semiconductor Lasers and Laser Dynamics IX
In the present talk we discuss the application of Template-Assisted Selective Epitaxy (TASE) for the monolithic integration of III-V active photonic devices on silicon. The main concept of TASE relies on the guided growth of III-Vs within a confined