Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Philip Weiser"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-5 (2021)
Scientific Reports
Scientific Reports
Conductive rutile TiO2 has received considerable attention recently due to multiple applications. However, the permittivity in conductive, reduced or doped TiO2 appears to cause controversy with reported values in the range 100–10,000. In this work
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2da6001747c12cb3e741f8364f2db0e3
https://doaj.org/article/4ef0fac2a2514ca282be7fa34efc7827
https://doaj.org/article/4ef0fac2a2514ca282be7fa34efc7827
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3103-Q3110
β-Ga2O3 is a transparent conducting oxide with a wide bandgap (4.9 eV) whose properties are generating widespread interest. It has been found that hydrogen can play a key role in the conductivity of Ga2O3 by passivating deep defects and acting as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bbda7cec51d9bab4193e0800c7c4b8f
https://doi.org/10.1149/2.0221907jss
https://doi.org/10.1149/2.0221907jss
Autor:
Lasse Vines, Filip Tuomisto, Ilja Makkonen, Vilde Mari Reinertsen, Antti Karjalainen, Philip Weiser
Publisher Copyright: © 2021 Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved. Positron annihilation spectroscopy, Fourier transform-infrared absorption spectroscopy, and secondary ion mass spectrometry have been used to study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6053d551abf758823dfd35debd92e417
http://hdl.handle.net/10138/330159
http://hdl.handle.net/10138/330159
Conductive rutile TiO2 has received considerable attention recently due to a number of applications. However, the static dielectric constant in conductive, reduced or doped TiO2 appears to cause controversy with reported values in the range 100-10000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e25f671041bd401ef3f67382bd34f5e4
https://doi.org/10.21203/rs.3.rs-301495/v1
https://doi.org/10.21203/rs.3.rs-301495/v1
Autor:
Joel B. Varley, Lasse Vines, Espen Førdestrøm Verhoeven, Philip Weiser, Ymir Kalmann Frodason, Christian Zimmermann
Publikováno v:
Physical Review Materials. 5
The combination of an ultrawide band gap and controllable $n$-type conductivity makes monoclinic gallium sesquioxide a promising material for high-power electronics. However, this technological development will require accurate knowledge about the id
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1bf88e3cf9f813adf59b22f1b15bca1
https://doi.org/10.1103/physrevmaterials.5.025402
https://doi.org/10.1103/physrevmaterials.5.025402
Autor:
Eduard Monakhov, Lasse Vines, Christoph Seiffert, Philip Weiser, Julie Bonkerud, Espen Førdestrøm Verhoeven, F. Herklotz, Christian Zimmermann
We report on electrically-active defects located between 0.054 and 0.69 eV below the conduction band edge in rutile T i O 2 single crystals subjected to reducing and hydrogenating heat treatments. Deep-level transient spectroscopy measurements record
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3a64d8fab9212b8b385d12539430705
http://hdl.handle.net/10852/81605
http://hdl.handle.net/10852/81605
Recent suggestions that hydrogen incorporation at the Ga(1) vacancy in β-Ga2O3 may have an impact on its electronic properties have led us to extend our earlier work on these defects. While our previous work provides strong evidence for one, two, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::314e9133b2e1a3a4abcc0ddc63c1bc53
http://hdl.handle.net/10852/80486
http://hdl.handle.net/10852/80486
Formation and control of the E2* center in implanted b-Ga2O3 by reverse-bias and zero-bias annealing
Autor:
Lasse Vines, E Førdestrøm Verhoeven, Christian Zimmermann, Joel B. Varley, Philip Weiser, Y Kalmann Frodason
Deep-level transient spectroscopy measurements are conducted on β-Ga 2 O 3 thin-films implanted with helium and hydrogen (H) to study the formation of the defect level E 2 ∗ ( E A = 0.71 eV) during heat treatments under an applied reverse-bias vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c8bd1ef3c7504bb900c5fe7c2424280
http://hdl.handle.net/10852/78434
http://hdl.handle.net/10852/78434
Publikováno v:
Journal of Applied Physics
Hydrogen (H) is thought to be strongly involved in the light and elevated temperature-induced degradation observed predominantly in p-type silicon wafers, but the nature of the defect or defects involved in this process is currently unknown. We have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7ca3e5c632430e9446d0a93b7a6fab1
http://hdl.handle.net/10852/77236
http://hdl.handle.net/10852/77236
Autor:
Eduard Monakhov, Julie Bonkerud, Espen Førdestrøm Verhoeven, Thomas Aarholt, Christian Zimmermann, Philip Weiser, Lasse Vines, F. Herklotz
Schottky barrier diodes (SBDs) were fabricated by depositing Pd, Pt or Ni on single crystal, conductive n-type rutile TiO2 using e-beam evaporation. As-grown and nominally undoped rutile TiO2 single crystals are semi-insulating, and were heat-treated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45e88e5ddb47cc1e05d172ea70fd577c
http://hdl.handle.net/10852/78439
http://hdl.handle.net/10852/78439