Výsledky vyhledávání - "Philip Seekell"

0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

Autor: P.M. Smith, Alice Vera, J. Diaz, James J. Komiak, K. H. George Duh, Kanin Chu, K. Nichols, Louis M. Mt. Pleasant, Peide D. Ye, Philip Seekell, Lin Dong, Dong Xu, Carlton T. Creamer, Xiaoping Yang, P.C. Chao, M. Ashman

Publikováno v: IEEE Transactions on Electron Devices. 63:3076-3083

We have developed 0.1- $\mu \text{m}$ gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeter-wave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94402cce99893677da7600801d3a1c6e
https://doi.org/10.1109/ted.2016.2579160

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