Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Philip Michael Cioffi"'
A PV Residential Microinverter With Grid-Support Function: Design, Implementation, and Field Testing
Autor:
Rui Zhou, Maja Harfman-Todorovic, Dong Dong, Luis Jose Garces, Xiaohu Liu, Philip Michael Cioffi, Mohammed Agamy
Publikováno v:
IEEE Transactions on Industry Applications. 54:469-481
Microinverter-based photovoltaic (PV) systems now represent about 8% of the U.S. residential market, and offer many advantages including safety, performance, and simplified installation. The next-generation of PV microinverter will include more ancil
Autor:
Gary Mandrusiak, Jian Dai, Rajib Datta, Tony Frangieh, Maja Harfman Todorovic, Brian Lynn Rowden, Philip Michael Cioffi, Frank Jakob John Mueller, Xu She
Publikováno v:
IEEE Transactions on Industry Applications. 53:3738-3747
Silicone carbide (SiC) power devices have been optimized in performance over the past decade. However, wide industry adoption of SiC technology still faces challenges from system design perspective. This paper demonstrates an integrated air-cooled th
Autor:
Brian Lynn Rowden, Fabio Carastro, Rajib Datta, Greg Dunne, Stephen Daley Arthur, David Alan Lilienfeld, Stacey Kennerly, Alexander Viktorovich Bolotnikov, David Richard Esler, Peter Almern Losee, Liangchun Yu, Feng Feng Tao, Maja Harfman-Todorovic, Joseph Lucian Smolenski, Ljubisa Dragoljub Stevanovic, Ravi Raju, Philip Michael Cioffi, Tobias Schuetz
Publikováno v:
Materials Science Forum. 858:894-899
This paper highlights ongoing efforts to validate performance, reliability and robustness of GE SiC MOSFETs for Aerospace and Industrial applications. After summarizing ruggedness and reliability testing performed on 1.2kV MOSFETs, two application ex
Autor:
Philip Michael Cioffi, Xu She, Frank Jakob John Mueller, Tony Frangieh, Jian Dai, Rajib Datta, Brian Lynn Rowden, Gary Mandrusiak, Maja Harfman Todorovich
Publikováno v:
2016 IEEE Energy Conversion Congress and Exposition (ECCE).
SiC power devices have been optimized in performance over the past decade. However, wide industry adoption of SiC technology still faces challenges from system design perspective. This paper demonstrates an integrated air-cooled three phase SiC power
Autor:
Stacey Kennerly, Ravi Raju, Philip Michael Cioffi, Tobias Schuetz, Alexander Viktorovich Bolotnikov, Ljubisa Dragoljub Stevanovic, Fabio Carastro, Brian Lynn Rowden, Peter Almern Losee, Rajib Datta, Maja Harfman-Todorovic, Fengfeng Tao
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A novel 1.7kV, 500A low inductance half-bridge module has been developed for fast-switching SiC devices. The module has a maximum temperature rating of 175°C. There are 12 GE SiC MOSFET chips per switch and the MOSFET's body diode is utilized as the
Electrical validation of a new arrangement of composite insulators for series compensation platforms
Publikováno v:
2016 IEEE/PES Transmission and Distribution Conference and Exposition (T&D).
Analysis was performed to evaluate the electrical impact of replacing long rod composite insulators in a series compensation platform structure with short rod insulators attached together with a metallic plate. Electric field analysis and system simu
Autor:
Philip Michael Cioffi, R.L. Sellick, Ranjan Gupta, Mark Edward Dame, Jian Dai, Mohammed Agamy, X. Li
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents the use of high frequency resonant power converters as building blocks for medium voltage and high voltage dc architectures. Resonant topologies provide high power density and high efficiency due to their soft switching characteri
Autor:
Fengfeng Tao, Philip Michael Cioffi, Peter Almern Losee, Frank Jakob John Mueller, Brian Lynn Rowden, Greg Dunne, Stacey Kennerly, Jeffrey Joseph Nasadoski, Alfred Permuy, Alexander Viktorovich Bolotnikov, Ljubisa Dragoljub Stevanovic, Ravisekhar Nadimpalli Raju, Maja Harfman-Todorovic
Publikováno v:
2015 IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents the latest 1.2kV–2.2kV SiC MOSFETs designed to maximize SiC device benefits for high-power, medium voltage power conversion applications. 1.2kV, 1.7kV and 2.2kV devices with die size of 4.5mm × 4.5mm were fabricated, exhibiting
Autor:
Philip Michael Cioffi, X. Li, Ranjan Gupta, Mark Edward Dame, Mohammed Agamy, R.L. Sellick, Jian Dai
Publikováno v:
11th IET International Conference on AC and DC Power Transmission.
Next-generation medium and high voltage DC grids are expected to comprise multiple terminals that include generation, loads and interconnections to other networks. DC faults pose a significant challenge to the implementation of multi-terminal DC netw