Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Philip Menz"'
Publikováno v:
APL Photonics, Vol 7, Iss 11, Pp 111301-111301-5 (2022)
Photonic lattices have emerged as an ideal testbed for localizing light in space. Among others, the most promising approach is based on flat band systems and their related nondiffracting compact localized states. So far, only compact localized states
Externí odkaz:
https://doaj.org/article/afa3c4d2e4fd4835b423a1df11729e19
Publikováno v:
Optics Express. 31:19544
Controlling random light is a key enabling technology that pioneered statistical imaging methods like speckle microscopy. Such low-intensity illumination is especially useful for bio-medical applications where photobleaching is crucial. Since the Ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c296d9260693135adc06b60001fbf91d
https://doi.org/10.1364/oe.486352
https://doi.org/10.1364/oe.486352
Publikováno v:
Umweltinformationssysteme – Vielfalt, Offenheit, Komplexität ISBN: 9783658397951
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36df43a0d690889ea8a14e109651424d
https://doi.org/10.1007/978-3-658-39796-8_6
https://doi.org/10.1007/978-3-658-39796-8_6
Publikováno v:
Advanced Optical Materials. 10:2270034
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beeedb379a7fd64ceaa04c39c0cb5b9a
https://doi.org/10.1002/adom.202270034
https://doi.org/10.1002/adom.202270034
We report on singular and nonsingular flat bands in a Sierpinski fractal-like photonic lattice. We demonstrate that the the lowest two bands, being isolated and degenerate due to geometrical frustration, are nonsingular and thus can be spanned by a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79bf267669257eeed2f58ed8107c5b1f
Publikováno v:
OSA Nonlinear Optics 2021.
We demonstrate light localization in a frustrated fractal-like photonic lattice owing multiple flat bands fabricated by femtosecond direct laser writing. We investigate the arising flat bands depending on the singularities of their Bloch wave functio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02903320ea22e6dcb3ec71556730987d
https://doi.org/10.1364/nlo.2021.nm2a.6
https://doi.org/10.1364/nlo.2021.nm2a.6
Publikováno v:
OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF).
Caustic networks show heavy-tailed intensity statistics and focus to rogue waves. Inspired by speckle microscopy, imaging with caustic networks requires adequate intensity statistics. We customize the intensity statistics of caustic networks.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88bb7f6a776bd62ecd3522425e72132c
https://doi.org/10.1364/np.2020.npth2d.4
https://doi.org/10.1364/np.2020.npth2d.4
Autor:
Hiroshi Yasuda, Hanbin Ying, Philip Menz, Tikurete G. Bantu, Anup P. Omprakash, Partha S. Chakraborty, John D. Cressler, Uppili S. Raghunathan, Brian R. Wier
Publikováno v:
IEEE Transactions on Electron Devices. 64:37-44
This paper examines the fundamental reliability differences between n-p-n and p-n-p SiGe HBTs. The device profile, hot carrier transport, and oxide interface differences between the two device types are explored in detail as they relate to device rel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f728a18119e1edf76ae161ea6574cd4e
https://doi.org/10.1109/ted.2016.2631982
https://doi.org/10.1109/ted.2016.2631982
Autor:
Philip Menz, Uppili S. Raghunathan, Hiroshi Yasuda, Partha S. Chakraborty, Tikurete G. Bantu, Brian R. Wier, John D. Cressler
Publikováno v:
IEEE Transactions on Electron Devices. 62:2084-2091
This paper uses a physics-based TCAD degradation model to examine the accumulated stress damage of SiGe HBTs under pseudodynamic mixed-mode stress as a function of both electrical stress bias and temperature. The temperature dependence of mixed-mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c3063f5d6abe9329e181435f7c1ab4
https://doi.org/10.1109/ted.2015.2433299
https://doi.org/10.1109/ted.2015.2433299
Autor:
Partha S. Chakraborty, Hiroshi Yasuda, Philip Menz, Brian R. Wier, Uppili S. Raghunathan, John D. Cressler
Publikováno v:
IEEE Transactions on Electron Devices. 62:2244-2250
We investigate and compare the hot-carrier degradation of SiGe HBTs under both traditional mixed-mode electrical stress conditions and high-current electrical stress conditions using measured stress data and an in-depth analysis of the underlying deg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360c123f5943ed6b4baf57ccaa3e8201
https://doi.org/10.1109/ted.2015.2434325
https://doi.org/10.1109/ted.2015.2434325