Zobrazeno 1 - 10
of 146
pro vyhledávání: '"Philip J. Tobin"'
Autor:
Zeynep Celik-Butler, Siva Prasad Devireddy, Hsing-Huang Tseng, Philip J. Tobin, Ania Zlotnicka
Publikováno v:
Microelectronics Reliability. 49:103-112
A new unified noise model is presented that accurately predicts the low-frequency noise spectrum exhibited by MOSFETs with high dielectric constant (high- k ), multi-stack gate dielectrics. The proposed multi-stack unified noise (MSUN) model is based
Autor:
Hsing-Huang Tseng, Siva Prasad Devireddy, Bigang Min, Philip J. Tobin, Ania Zlotnicka, Zeynep Celik-Butler
Publikováno v:
Microelectronics Reliability. 47:1228-1232
Low frequency noise measurements were performed on n- and p-channel MOSFETs with TaSiN and TiN metal gates, respectively, deposited on ALD HfO2 gate dielectric. Lower normalized current noise power spectral density is reported for these devices in co
Publikováno v:
IEEE Transactions on Electron Devices. 53:1943-1946
Anomalous asymmetry (which here means "beyond that to be expected classically") between accumulation and strong inversion was observed in the measured capacitance-voltage (C-V) curves of metal gate nMOSFETs with ~ 1 nm equivalent oxide thickness (EOT
Autor:
Hsing-Huang Tseng, Dina H. Triyoso, Z.X. Jiang, Rama I. Hegde, Philip J. Tobin, K. Kim, T. Y. Luo, J. Y. Yang, D. Sieloff, J. Lerma
Publikováno v:
Applied Surface Science. 252:7172-7175
This work investigated optimal conditions for SIMS analyses of HfO 2 /Si and TiN/HfO 2 interfaces as well as nitrogen distributions in HfO 2 films. It was demonstrated that SIMS profiling from the back side of wafers was desirable to eliminate artifi
Autor:
Zeynep Celik-Butler, Bigang Min, Ania Zlotnicka, Fang Wang, Hsing-Huang Tseng, Philip J. Tobin, Siva Prasad Devireddy
Publikováno v:
IEEE Transactions on Electron Devices. 53:538-544
Low-frequency noise characteristics are reported for TaSiN-gated n-channel MOSFETs with atomic-layer deposited HfO/sub 2/ on thermal SiO/sub 2/ with stress-relieved preoxide (SRPO) pretreatment. For comparison, control devices were also included with
Autor:
Helen C. Aspinall, Kaupo Kukli, Philip J. Tobin, Markku Leskelä, Mikko Ritala, Timo Sajavaara, David C. Gilmer, Rama I. Hegde, Viljami Pore, Anthony C. Jones
Publikováno v:
Chemical Vapor Deposition. 12:158-164
Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250 °C. The effect of pulse times and p
Autor:
J. Lerma, T. Y. Luo, Z.X. Jiang, Philip J. Tobin, Dina H. Triyoso, J. Y. Yang, N. Ramani, K. Kim, Hsing-Huang Tseng, D. Sieloff
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 23:589-592
Accurate characterization of the nitrogen distribution in a thin HfO2 film is important for process development on the nitridation of HfO2. Low energy secondary ion mass spectrometry (LESIMS) is potentially the technique of choice, thanks to the comb
Autor:
M. Moosa, D. Tekleab, Philip J. Tobin, C. Tracy, Rama I. Hegde, Hsing-Huang Tseng, M. Ramon, David C. Gilmer, S. Kalpat, C. Capasso, B. E. White
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 5:26-35
Significant deviations in BTI characteristics for metal gate HfO/sub 2/ films compared to silicon oxide based films prove that conventional reliability models based on SiO/sub 2/ films can no longer be directly applied to HfO/sub 2/ based MOSFETS. Th
Autor:
L.Y. Song, W. He, Miaomiao Wang, H.M. Bu, Philip J. Tobin, X. W. Wang, Tso-Ping Ma, Hsing-Huang Tseng
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 5:36-44
Several special reliability features for Hf-based high-/spl kappa/ gate dielectrics are highlighted, including: 1) trapping-induced threshold voltage (V/sub th/) shift is much more of a concern than TDDB in determining the operating lifetime; 2) n-ch
Autor:
Mikko Ritala, Markku Leskelä, Tero Pilvi, David C. Gilmer, Timo Sajavaara, Helen C. Aspinall, Kaupo Kukli, Philip J. Tobin, Anthony C. Jones
Publikováno v:
Chemistry of Materials. 16:5162-5168
Amorphous PrOx based films were grown by atomic layer deposition in the temperature range 200−400 °C from Pr[N(SiMe3)2]3 and H2O on n-Si(100) and borosilicate glass substrates. The films contained considerable amounts of residual hydrogen and resi