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pro vyhledávání: '"Philip, Timothy M."'
Autor:
Sarwat, Syed Ghazi, Philip, Timothy M., Chen, Ching-Tzu, Kersting, Benedikt, Bruce, Robert L, Cheng, Cheng-Wei, Li, Ning, Saulnier, Nicole, BrightSky, Matthew, Sebastian, Abu
Publikováno v:
Adv. Funct. Mater. 2021, 31, 2106547
Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities
Externí odkaz:
http://arxiv.org/abs/2105.13693
Autor:
Philip, Timothy M., Lanzillo, Nicholas A., Gunst, Tue, Markussen, Troels, Cobb, Jonathan, Aboud, Shela, Robison, Robert R.
Publikováno v:
Phys. Rev. Applied 13, 044045 (2020)
As the semiconductor industry turns to alternate conductors to replace Cu for future interconnect nodes, much attention as been focused on evaluating the electrical performance of Ru. The typical hexagonal close-packed (hcp) phase has been extensivel
Externí odkaz:
http://arxiv.org/abs/2001.02216
Publikováno v:
Phys. Rev. B 100, 081104 (2019)
Topology plays a central role in nearly all disciplines of physics, yet its applications have so far been restricted to closed, lossless systems in thermodynamic equilibrium. Given that many physical systems are open and may include gain and loss mec
Externí odkaz:
http://arxiv.org/abs/1901.09961
Publikováno v:
Phys. Rev. B 98, 155430 (2018)
Recent work has extended topological band theory to open, non-Hermitian Hamiltonians, yet little is understood about how non-Hermiticity alters the topological quantization of associated observables. We address this problem by studying the quantum an
Externí odkaz:
http://arxiv.org/abs/1805.08892
With the continued scaling of microelectronic devices along with the growing demand of high-speed wireless telecommunications technologies, there is increasing need for high-frequency device modeling techniques that accurately capture the quantum mec
Externí odkaz:
http://arxiv.org/abs/1801.09611
Publikováno v:
Scientific Reports 7, 6736 (2017)
The realization of high-performance, small-footprint, on-chip inductors remains a challenge in radio-frequency and power microelectronics, where they perform vital energy transduction in filters and power converters. Modern planar inductors consist o
Externí odkaz:
http://arxiv.org/abs/1706.07381
Publikováno v:
Phys. Rev. B 94, 235434 (2016)
As a promising candidate system to realize topological superconductivity, the system of a 3D topological insulator (TI) grown on top of the s-wave superconductor has been extensively studied. To access the topological superconductivity experimentally
Externí odkaz:
http://arxiv.org/abs/1609.04129
Publikováno v:
IEEE Electron Device Letters, vol. 38, no. 1, pp. 138-141, Jan. 2017
The poor performance of copper interconnects at the nanometer scale calls for new material solutions for continued scaling of integrated circuits. We propose the use of three dimensional time-reversal-invariant topological insulators (TIs), which hos
Externí odkaz:
http://arxiv.org/abs/1607.06131
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Autor:
Philip, Timothy M., Brew, Kevin W., Li, Ning, Simon, Andrew, Liu, Zuoguang, Ok, Injo, Adusumilli, Praneet, Saraf, Iqbal, Conti, Richard, Ogundipe, Odunayo, Robison, Robert R., Saulnier, Nicole, Sebastian, Abu, Narayanan, Vijay
Publikováno v:
MRS Bulletin; Mar2023, Vol. 48 Issue 3, p228-236, 9p