Zobrazeno 1 - 10
of 185
pro vyhledávání: '"Philip, G. Neudeck"'
Autor:
Robert Stahlbush, Philip G. Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley, Aivars J. Lelis
ICSCRM 2017Selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA
ICSCRM 2011Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
Autor:
Philip G. Neudeck, Liangyu Chen, Roger D. Meredith, Dorothy Lukco, David J. Spry, Leah M. Nakley, Gary W. Hunter
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 100-110 (2019)
Prolonged Venus surface missions (lasting months instead of hours) have proven infeasible to date in the absence of a complete suite of electronics able to function for such durations without protection from the planet's extreme conditions of ~460°C
Externí odkaz:
https://doaj.org/article/bd57a1f96dae4c60b698ffcafa78e031
Publikováno v:
Materials Science Forum. 1062:519-522
The development of robust, high-performance integrated circuits (ICs) will enable numerous potential NASA missions of current interest, including long-duration robotic missions exploring the 460°C surface of Venus. Currently, NASA is looking towards
Publikováno v:
2022 Device Research Conference (DRC).
Autor:
Philip G. Neudeck, Roger D. Meredith, Liangyu Chen, David J. Spry, Leah M. Nakley, Gary W. Hunter
Publikováno v:
AIP Advances, Vol 6, Iss 12, Pp 125119-125119-7 (2016)
The prolonged operation of semiconductor integrated circuits (ICs) needed for long-duration exploration of the surface of Venus has proven insurmountably challenging to date due to the ∼ 460 °C, ∼ 9.4 MPa caustic environment. Past and planned Ve
Externí odkaz:
https://doaj.org/article/43c58e1c221745b8afde696755af23cb
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2021:000069-000075
Along with the development of silicon carbide (SiC) sensors and electronic devices for operation at 500°C, compatible packaging technologies are needed for long term high temperature test and deployment of these sensors and electronic devices. 96% A
Autor:
Lawrence C. Greer, Dorothy Lukco, Norman F. Prokop, Glenn M. Beheim, Michael J. Krasowski, Philip G. Neudeck, Carl W. Chang, David J. Spry, Liang-Yu Chen
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2021:000064-000068
At HiTEC 2018, NASA Glenn Research Center reported the first demonstration of yearlong 500 °C operation of ceramic-packaged “Generation 10” ~200-transistor integrated circuits (ICs) based on two-level interconnect silicon carbide (4H-SiC) juncti
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2021:000076-000082
A scalable, compact oven testbed system for simultaneously evaluating a multitude of high temperature integrated circuits (ICs) for prolonged operating times of up to 600 °C has been prototyped. The new testbed system enables long-duration high temp
Autor:
Robert S. Okojie, Leah M. Nakley, Gary W. Hunter, Dorothy Lukco, Kyle G. Phillips, Philip G. Neudeck, David J. Spry
Publikováno v:
Journal of Spacecraft and Rockets. 57:1118-1128
Materials used in the fabrication of landers for Venus exploration need to be carefully selected to assure functional durability throughout anticipated prolonged future mission durations in the har...