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pro vyhledávání: '"Phase-shift mask"'
Akademický článek
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Background: The successful introduction of extreme ultraviolet (EUV) lithography to high volume manufacturing has increased the interest to push this technology to its ultimate limits. This will require photoresist materials, which enable a better tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea09cf9820e1cfe2cfab5cccabf6f9a3
https://publica.fraunhofer.de/handle/publica/435500
https://publica.fraunhofer.de/handle/publica/435500
Akademický článek
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Publikováno v:
Photomask Technology 2021.
As semiconductor technology became more integrated, the numerical aperture (NA) of extreme ultraviolet (EUV) exposure technology has increased from 0.33 to 0.55 to realize finer patterning. High NA EUVL aims to enable 8 nm half pitch resolution. As t
Autor:
Rajiv N. Sejpal, Bruce W. Smith
Publikováno v:
Photomask Technology 2021.
Alternatives to Ta-based absorbers are being considered for next generation lithography nodes to reduce 3D mask effects and to improve image modulation through phase interference. Low complex refractive index (n – ik) materials can provide phase sh
Publikováno v:
Photomask Technology 2021.
Toward logic 3nm and beyond, mask 3D effect and stochastic failure are main issues in EUV lithography. Alternative absorber material is required to mitigate those issues. EUV attenuated phase shift type absorber with low n value enables to achieve hi
Autor:
Eelco van Setten, Gerardo Bottiglieri, Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Claire van Lare, Mark van de Kerkhof, Tim Brunner
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
We employ the hybrid mask model of the Fraunhofer IISB simulator Dr.LiTHO to investigate the role of the absorber and multilayer for the observed image blur and contrast loss mechanisms. Hybrid mask model decomposes the EUV mask into the absorber and
Publikováno v:
Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology.
ArF lithography is still applied to the majority of critical layers, even with increasing of extreme ultraviolet lithography in leading-edge production. As wafer design shrinks, conventional 6% phase shift mask (PSM) becomes hard to meet the ArF lith
Autor:
Sherwin, Stuart, Cordova, Isvar, Miyakawa, Ryan, Benk, Markus, Waller, Laura, Neureuther, Andrew, Naulleau, Patrick
Publikováno v:
Journal of Micro/Nanopatterning Materials and Metrology, vol 20, iss 3
With growing interest in EUV attenuated phase-shift masks due to their superior image quality for applications such as dense contact and pillar arrays, it is becoming critical to model, measure, and monitor the intensity and relative phase of multila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::6c42af82bf498dfb3223a4b8f438b7cc
https://escholarship.org/uc/item/2p42q3sr
https://escholarship.org/uc/item/2p42q3sr
Autor:
Cheuk-Wah Man, Paul van Adrichem, Yohei Ikebe, Claire van Lare, Frank Timmermans, Jo Finders, Takahiro Onoue, Olena Romanets, Takeshi Aizawa
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
The low-n attenuated phase-shift mask can strongly improve extreme ultraviolet imaging performance; it enhances contrast by mask 3D mitigation and a phase-shift effect while simultaneously reducing the required exposure dose. The latter happens becau