Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Phanikumar Konkapaka"'
Autor:
Michael G. Spencer, Phanikumar Konkapaka, Yu.N. Makarov, Balaji Raghothamachar, Michael Dudley
Publikováno v:
Journal of Crystal Growth. 289:140-144
Single-crystal GaN layers of 20–40 μm thickness were grown in an oxide transport process using a mixture of commercially available Ga 2 O 3 powder and graphite powder as precursors. Ammonia was used as the source of nitrogen in these experiments.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e638db2e2d64e0e8e8b77eb7b5c3739e
https://doi.org/10.1016/j.jcrysgro.2005.11.005
https://doi.org/10.1016/j.jcrysgro.2005.11.005
Autor:
Buguo Wang, D. Zhuang, Raoul Schlesser, Jie Bai, Michael J. Callahan, Balaji Raghothamachar, Phanikumar Konkapaka, Michael Dudley, Michael G. Spencer, Zlatko Sitar, Rafael Dalmau, Z.G. Herro, Kelly Rakes
Publikováno v:
Journal of Crystal Growth. 287:349-353
Sublimation method, spontaneously nucleated as well as seeded on SiC substrates, has been employed for growing AlN bulk crystals. For GaN growth, in addition to the sublimation method using sapphire substrates, ammonothermal growth (analogous to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26b554a8bb5d1b9fd5fa041452612544
https://doi.org/10.1016/j.jcrysgro.2005.11.042
https://doi.org/10.1016/j.jcrysgro.2005.11.042
Autor:
Michael G. Spencer, Lori A. Lepak, Huaqiang Wu, Francis J. DiSalvo, Kyota Uheda, Phanikumar Konkapaka, Janet L. Hunting
Publikováno v:
Journal of Crystal Growth. 279:303-310
The synthesis of high purity, single-phase gallium nitride (GaN) powder has been achieved through the reaction between molten Ga and ammonia (NH 3 ) using Bi as a catalyst. In this simple apparatus, 25 g Ga can be fully, stoichiometrically converted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e18d5b79a96935417fed62434b39e1
https://doi.org/10.1016/j.jcrysgro.2005.02.040
https://doi.org/10.1016/j.jcrysgro.2005.02.040
Publikováno v:
physica status solidi (c). 2:2032-2035
GaN crystals were grown in a dedicated, resistively heated reactor at 1165 °C and 600 Torr. In this approach, gaseous gallium was obtained by the decomposition of GaN powder while nitrogen was provided from the dissociation of ammonia. GaN was grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0956d8e36ee10fc27420f2e551c210f
https://doi.org/10.1002/pssc.200461553
https://doi.org/10.1002/pssc.200461553
Publikováno v:
International Journal of High Speed Electronics and Systems. 14:745-749
Using a novel Ga vapor transport technique, thick gallium nitride layers have been deposited on a 3-6 μm GaN film grown on sapphire substrate via hydride vapor phase epitaxy (HVPE). GaN powder was successfully used as a stable Ga source material for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::802ca6a92aec9391795dcb2483d04e2f
https://doi.org/10.1142/s0129156404002776
https://doi.org/10.1142/s0129156404002776
Publikováno v:
MRS Proceedings. 892
The sublimation growth technique is highly attractive as a commercially viable GaN substrate technology on account of its simplicity and relatively high growth rates. Sublimation growth of GaN using GaN powder source, however, is hampered by formatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::186d767a905378c360f44a1597977d1b
https://doi.org/10.1557/proc-0892-ff30-07
https://doi.org/10.1557/proc-0892-ff30-07
Publikováno v:
MRS Proceedings. 892
Using a novel gallium (Ga) vapor transport technique, thick gallium nitride (GaN) layers have been grown using GaN powder as the source material. In this technique, GaN powder decomposes at 1100oC into gallium and nitrogen vapors. The Ga vapors are t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ff1149748057d22b2cadc46beb4ac13
https://doi.org/10.1557/proc-0892-ff30-01
https://doi.org/10.1557/proc-0892-ff30-01
Autor:
Buguo Wang, David Bliss, Balaji Raghothamachar, Huaqiang Wu, Michael G. Spencer, Phanikumar Konkapaka, Michael Dudley, Michael J. Callahan
Publikováno v:
MRS Proceedings. 831
Single crystal GaN substrates are a more reliable, efficient and low cost alternative to sapphire and SiC substrates that are currently being used for developing nitride based devices such as LEDs, high power FETs and laser diodes. GaN growth by two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073de7a92c49cdf1383ccbfbcacf43a3
https://doi.org/10.1557/proc-831-e8.23
https://doi.org/10.1557/proc-831-e8.23
Publikováno v:
MRS Proceedings. 831
Bulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb5a9294a0177d6c83a5118bf7f26edd
https://doi.org/10.1557/proc-831-e11.33
https://doi.org/10.1557/proc-831-e11.33