Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Ph. Ged"'
Publikováno v:
Journal of Applied Physics. 46:3549-3555
We have studied the photoluminescence of ZnSe doped by diffusion of Al at high temperature (1000–1100 °C) or by Ga at low temperature (600 °C). The diffused samples are highly conductive (0.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59900caf8b1bd0c6c1480d6d3add5d2a
https://doi.org/10.1063/1.322266
https://doi.org/10.1063/1.322266
Autor:
M.H. Debroux, Ph. Ged
Publikováno v:
Le Journal de Physique Colloques. 44:C10-267
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73c023abed9da63a170d4d8676c3eca4
https://doi.org/10.1051/jphyscol:19831056
https://doi.org/10.1051/jphyscol:19831056
Autor:
Ph. Ged
Publikováno v:
Journal of Physics and Chemistry of Solids. 40:439-444
In order to understand the processes involved in the doping of zinc selenide from an aluminum vapor phase, we present a theoretical study of such a heat treatment. The quenching effects due to the cooling of the crystal are considered, giving results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::282db81ac81f946d1e0547d3ba289a90
https://doi.org/10.1016/0022-3697(79)90059-3
https://doi.org/10.1016/0022-3697(79)90059-3
Publikováno v:
Physical Review B. 29:6981-6984
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77fbe05199e18fa8c55ecafa5f15f03e
https://doi.org/10.1103/physrevb.29.6981
https://doi.org/10.1103/physrevb.29.6981
Autor:
Ph. Ged, F. Degreve
Publikováno v:
Surface and Interface Analysis. 5:83-86
Depth profiles of mono and polyatomic ions (Si+, SiO+, Si, Si++) have been determined by SIMS under Ar+ ion bombardment on 100 A to 700 A thick thermal SiO2 layers. The main experimental results are: (1) The best depth resolution is obtained with Si+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::974ee016db93406537f435ad27b522e8
https://doi.org/10.1002/sia.740050206
https://doi.org/10.1002/sia.740050206
Publikováno v:
Le Journal de Physique Colloques. 44:C10-257
Un ellipsometre monochromatique (632.8 nm.) a analyseur tournant a ete utilise pour suivre en temps reel l'oxydation anodique du silicium dans un plasma d oxygene (13.56 MHz, 600 W, 4 Pa). Un modele comportant une seule couche transparente homogene s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ad5998fecc06bfcb91459c94209df83
https://doi.org/10.1051/jphyscol:19831054
https://doi.org/10.1051/jphyscol:19831054
Publikováno v:
Thin Solid Films. 91:327-334
Spectroscopic ellipsometry was used to characterize thermally grown silicon dioxide layers with thicknesses in the 100–500 A range. Both the thickness and the effective optical index of the layers are obtained. A phenomenological parameter is intro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05c1f684cfe93fc3cda1562730868a7a
https://doi.org/10.1016/0040-6090(82)90255-3
https://doi.org/10.1016/0040-6090(82)90255-3
Publikováno v:
Annual Review of Plant Biology; 2024, Vol. 75 Issue 1, p521-550, 30p
Autor:
Jeehyun Kim, Lip-Yuen Teng, Shaker, Bilal, Dokyun Na, Hyun Yong Koh, Soon Sung Kwon, Joon Soo Lee, Heung Dong Kim, Hoon-Chul Kang, Se Hee Kim
Publikováno v:
Journal of Medical Genetics; Nov2023, Vol. 60 Issue 11, p1076-1083, 8p
Autor:
Yuki Kitamura1, Ken-ichi Saeki1,2 ksaeki@kinjo-u.ac.jp
Publikováno v:
Drug Discoveries & Therapeutics. Aug2020, Vol. 14 Issue 4, p204-208. 5p.