Zobrazeno 1 - 10
of 370
pro vyhledávání: '"Pezzoli F."'
Publikováno v:
Phys. Rev. Research 5, L022035 (2023)
Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontaneously sustains topological properties, while being fully compatible wi
Externí odkaz:
http://arxiv.org/abs/2210.02981
Autor:
Rossi, S., Simola, E. Talamas, Raimondo, M., Acciarri, M., Pedrini, J., Balocchi, A., Marie, X., Isella, G., Pezzoli, F.
Publikováno v:
Adv. Optical Mater. 2022, 2201082
The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark effect, a
Externí odkaz:
http://arxiv.org/abs/2205.10134
Akademický článek
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Autor:
Montanari, M., Virgilio, M., Manganelli, C. L., Zaumseil, P., Zoellner, M. H., Hou, Y., Schubert, M. A., Persichetti, L., Di Gaspare, L., De Seta, M., Vitiello, E., Bonera, E., Pezzoli, F., Capellini, G.
Publikováno v:
Phys. Rev. B 98, 195310 (2018)
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetr
Externí odkaz:
http://arxiv.org/abs/1811.08665
Autor:
Pezzoli, F., Giorgioni, A., Gallacher, K., Isa, F., Biagioni, P., Millar, R. W., Gatti, E., Grilli, E., Bonera, E., Isella, G., Paul, D. J., Miglio, Leo
Publikováno v:
Appl. Phys. Lett. 108, 262103 (2016)
We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures
Externí odkaz:
http://arxiv.org/abs/1603.08700
Autor:
Vitiello, E., Virgilio, M., Giorgioni, A., Frigerio, J., Gatti, E., De Cesari, S., Bonera, E., Grilli, E., Isella, G., Pezzoli, F.
Publikováno v:
Phys. Rev. B 92, 201203(R) (2015)
The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinatio
Externí odkaz:
http://arxiv.org/abs/1510.08614
Autor:
Pezzoli, F., Isa, F., Isella, G., Falub, C. V., Kreiliger, T., Salvalaglio, M., Bergamaschini, R., Grilli, E., Guzzi, M., von Kaenel, H., Miglio, Leo
Publikováno v:
Phys. Rev. Applied 1, 044005 (2014)
Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to extend Si funct
Externí odkaz:
http://arxiv.org/abs/1306.5270
Publikováno v:
Phys. Rev. B 88, 045204 (2013)
Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield
Externí odkaz:
http://arxiv.org/abs/1305.4024
Autor:
Pezzoli, F., Bottegoni, F., Trivedi, D., Ciccacci, F., Giorgioni, A., Li, P., Cecchi, S., Grilli, E., Song, Y., Guzzi, M., Dery, H., Isella, G.
Publikováno v:
Phys. Rev. Lett. 108, 156603 (2012)
We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the
Externí odkaz:
http://arxiv.org/abs/1111.5209
Autor:
Pezzoli F.
Publikováno v:
Communications Physics. 6
February 22, 2023 marks an important milestone. We celebrate the fifth anniversary of Communications Physics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ad43f83067e725875f322d51510ef48
https://doi.org/10.1038/s42005-023-01150-y
https://doi.org/10.1038/s42005-023-01150-y
