Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Pezzagna, Sébastien"'
Autor:
Tchernij, Sviatoslav Ditalia, Corte, Emilio, Lühmann, Tobias, Traina, Paolo, Pezzagna, Sébastien, Degiovanni, Ivo Pietro, Provatas, Georgios, Moreva, Ekaterina, Meijer, Jan, Olivero, Paolo, Genovese, Marco, Forneris, Jacopo
We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405–5
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A85051
https://ul.qucosa.de/api/qucosa%3A85051/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A85051/attachment/ATT-0/
Autor:
Durand, Alrik, Baron, Yoann, Udvarhelyi, Péter, Cache, Félix, R., Krithika V., Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gali, Adam, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the s
Externí odkaz:
http://arxiv.org/abs/2404.15069
Autor:
Durand, Alrik, Baron, Yoann, Cache, Félix, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Publikováno v:
Physical Review B 110, 2 (2024)
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However
Externí odkaz:
http://arxiv.org/abs/2402.07705
Autor:
John, Roger, Lehnert, Jan, Mensing, Michael, Spemann, Daniel, Pezzagna, Sébastien, Meijer, Jan
Using shallow implantation of ions and molecules with masses centred at 27 atomic mass units(amu) in diamond, a new artificial optical centre with unique properties has been created. The centre shows a linearly polarised fluorescence with a main narr
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A84932
https://ul.qucosa.de/api/qucosa%3A84932/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A84932/attachment/ATT-0/
Autor:
Riedrich-Möller, Janine, Pezzagna, Sébastien, Meijer, Jan Berend, Pauly, Christoph, Mücklich, Frank, Markham, Matthew, Edmonds, Andrew M., Becher, Christoph
We present the controlled creation of single nitrogen-vacancy (NV) centers via ion implantation at the center of a photonic crystal cavity which is fabricated in an ultrapure, single crystal diamond membrane. High-resolution placement of NV centers i
Externí odkaz:
https://ul.qucosa.de/id/qucosa%3A31859
https://ul.qucosa.de/api/qucosa%3A31859/attachment/ATT-0/
https://ul.qucosa.de/api/qucosa%3A31859/attachment/ATT-0/
Autor:
Baron, Yoann, Durand, Alrik, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Robert-Philip, Isabelle, Abbarchi, Marco, Hartmann, Jean-Michel, Reboh, Shay, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Publikováno v:
Applied Physics Letters 121, 084003 (2022)
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions
Externí odkaz:
http://arxiv.org/abs/2204.13521
Autor:
Setzer, Annette, Esquinazi, Pablo D., Daikos, Olesya, Scherzer, Tom, Pöppl, Andreas, Staacke, Robert, Lühmann, Tobias, Pezzagna, Sebastien, Knolle, Wolfgang, Buga, Sergei, Abel, Bernd, Meijer, Jan
Several diamond bulk crystals with a concentration of electrically neutral single substitutional nitrogen atoms of $\lesssim 80~$ppm, the so-called C- or P1-centres, were irradiated with electrons at 10 MeV energy and low fluence. The results show a
Externí odkaz:
http://arxiv.org/abs/2108.13850
Autor:
Baron, Yoann, Durand, Alrik, Udvarhelyi, Péter, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Robert-Philip, Isabelle, Abbarchi, Marco, Hartmann, Jean-Michel, Mazzocchi, Vincent, Gérard, Jean-Michel, Gali, Adam, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Publikováno v:
ACS Photonics 9, 2337-2345 (2022)
Controlling the quantum properties of individual fluorescent defects in silicon is a key challenge towards advanced quantum photonic devices prone to scalability. Research efforts have so far focused on extrinsic defects based on impurities incorpora
Externí odkaz:
http://arxiv.org/abs/2108.04283
Autor:
Corte, Emilio, Sachero, Selene, Tchernij, Sviatoslav Ditalia, Lühmann, Tobias, Pezzagna, Sébastien, Traina, Paolo, Degiovanni, Ivo Pietro, Moreva, Ekaterina, Olivero, Paolo, Meijer, Jan, Genovese, Marco, Forneris, Jacopo
We report a systematic photoluminescence (PL) investigation of the spectral emission properties of individual optical defects fabricated in diamond upon ion implantation and annealing. Three spectral lines at 620 nm, 631 nm, and 647 nm are identified
Externí odkaz:
http://arxiv.org/abs/2106.07365
Autor:
Tchernij, Sviatoslav Ditalia, Corte, Emilio, Lühmann, Tobias, Traina, Paolo, Pezzagna, Sébastien, Degiovanni, Ivo Pietro, Provatas, Georgios, Moreva, Ekaterina, Meijer, Jan, Olivero, Paolo, Genovese, Marco, Forneris, Jacopo
We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405-520
Externí odkaz:
http://arxiv.org/abs/2106.01049