Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Peyush Pande"'
Autor:
Vikas Joshi, Utkarsh Jadli, Peyush Pande, Mayank Chaturvedi, Daniel Haasmann, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 11, Pp 116472-116479 (2023)
We investigate the impact of power MOSFET channel width on the power efficiency of a switch-mode power supply. With this analysis, we derive a circuit-specific criterion that minimizes the power dissipated by a power MOSFET, which is based on the rat
Externí odkaz:
https://doaj.org/article/922b249390d44e80a997aa2c9771a9b7
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mo
Externí odkaz:
https://doaj.org/article/8f3596bb4fd0489cbccbdb69c4d98611
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Hamid Amini Moghadam, Daniel Haasmann, Peyush Pande, Utkarsh Jadli
Publikováno v:
IEEE Access, Vol 9, Pp 109745-109753 (2021)
Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharg
Externí odkaz:
https://doaj.org/article/575851fd107e46e3b9de43ad46e4914a
Autor:
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Jordan R. Nicholls, Peyush Pande, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 98038-98043 (2020)
Two different equations for the current through voltage-dependent capacitances are used in the literature. One equation is obtained from the time derivative of charge that is considered as capacitance-voltage product: dQ/dt = d[C(V )V ]/dt = C(V)[dV
Externí odkaz:
https://doaj.org/article/30929905b80e4ad5bee0b1b413fcb4c8
Autor:
Utkarsh Jadli, Faisal Mohd-Yasin, Hamid Amini Moghadam, Peyush Pande, Jordan R. Nicholls, Sima Dimitrijev
Publikováno v:
IEEE Access, Vol 8, Pp 187043-187051 (2020)
Analysis of the switching losses in a power MOSFET is crucial for the design of efficient power electronic systems. Currently, the state-of-the-art technique is based on measured drain current and drain-to-source voltage during the switching interval
Externí odkaz:
https://doaj.org/article/f55a9104c9d84f99a948349cced1e22c
Autor:
Peyush Pande, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Philip Tanner, Jisheng Han
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 468-474 (2018)
This brief presents direct electrical measurement of active defects in the strong-accumulation region of N-type 4H-SiC MOS capacitors, which corresponds to the strong-inversion region of N-channel MOSFETs. The results demonstrate the existence of an
Externí odkaz:
https://doaj.org/article/16ee35701d25404fbc2ac6a017c61f6c
Autor:
Mayank Chaturvedi, Sima Dimitrijev, Daniel Haasmann, Hamid Amini Moghadam, Peyush Pande, Utkarsh Jadli
Publikováno v:
IEEE Transactions on Electron Devices. 69:6225-6230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ffcadb3e68b24a3610c28238f9bb2e
https://doi.org/10.1109/ted.2022.3206184
https://doi.org/10.1109/ted.2022.3206184
Publikováno v:
2023 International Conference on Device Intelligence, Computing and Communication Technologies, (DICCT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca7f268ca44cc7cd03691e3b75ff7c68
https://doi.org/10.1109/dicct56244.2023.10110108
https://doi.org/10.1109/dicct56244.2023.10110108
Autor:
Hamid Amini Moghadam, Utkarsh Jadli, Mayank Chaturvedi, Peyush Pande, Sima Dimitrijev, Daniel Haasmann
Publikováno v:
IEEE Access, Vol 9, Pp 109745-109753 (2021)
Oxide traps existing in 4H-SiC MOS capacitors with fast response times that are active in the strong accumulation and depletion regions were characterized by an integrated-charge method. The method is based on the measurement of charging and discharg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::715d79b4a8e1c99be4e1b4a14125d1de
https://doi.org/10.1109/access.2021.3102614
https://doi.org/10.1109/access.2021.3102614
Autor:
Utkarsh Jadli, Peyush Pande, Sima Dimitrijev, Hamid Amini Moghadam, Jordan R. Nicholls, Faisal Mohd-Yasin
Publikováno v:
IEEE Transactions on Power Electronics. 35:12629-12632
The parasitic capacitances of semiconductor power devices that contribute to the switching losses are voltage dependent, which can make calculations of their stored energy difficult. Typically, manufacturers will provide effective capacitance values
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a37f9f023fcc1a4ade07987ed90453
https://doi.org/10.1109/tpel.2020.2993639
https://doi.org/10.1109/tpel.2020.2993639