Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Peyre, Herve"'
Autor:
Alassaad, Kassem, Soulière, Véronique, Cauwet, François, Peyre, Hervé, Carole, Davy, Kwasnicki, Pawel, Juillaguet, Sandrine, Kups, Thomas, Pezoldt, Jörg, Ferro, Gabriel
Publikováno v:
Acta Materialia 75 (2014) 219-226
In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets
Externí odkaz:
http://arxiv.org/abs/1407.3222
Autor:
Contreras, Sylvie, Konczewicz, Leszek, Ben Messaoud, Jaweb, Peyre, Hervé, Al Khalfioui, Mohamed, Matta, Samuel, Leroux, Mathieu, Damilano, Benjamin, Brault, Julien
Publikováno v:
In Superlattices and Microstructures October 2016 98:253-258
Autor:
CONTRERAS, Sylvie, KONCZEWICZ, Leszek, JUILLAGUET, Sandrine, PEYRE, Herve, Al khalfioui, Mohamed, Matta, Samuel, Leroux, Mathieu, Damilano, Benjamin, GIL, Bernard, Brault, Julien
Publikováno v:
International Workshop on Nitride Semiconductor
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e304c6bc54fbc88244e3267971e2fc01
https://hal.archives-ouvertes.fr/hal-01937531
https://hal.archives-ouvertes.fr/hal-01937531
Autor:
Brault, Julien, Leroux, Mathieu, Matta, Samuel, Al khalfioui, Mohamed, Damilano, Benjamin, PEYRE, Herve, CONTRERAS, Sylvie, JUILLAGUET, Sandrine, GIL, Bernard
Publikováno v:
International Workshop on Nitride Semiconductor
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan
Poster; International audience; Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a74a7f4f77864335c655905562f2b0a0
https://hal.archives-ouvertes.fr/hal-01937537
https://hal.archives-ouvertes.fr/hal-01937537
Autor:
Brault, Julien, Matta, Samuel, Al khalfioui, Mohamed, Leroux, Mathieu, Damilano, Benjamin, Chenot, S., Korytov, M, PEYRE, Herve, KONCZEWICZ, Leszek, CONTRERAS, Sylvie, Chaix, C., Massies, Jean, GIL, Bernard
Publikováno v:
12th international conference on nitride semiconductors
12th international conference on nitride semiconductors, Jul 2017, STRASBOURG, France
12th international conference on nitride semiconductors, Jul 2017, STRASBOURG, France
International audience; Quantum Dot based UV Light Emitting Diodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0b06516d95a41b496eff0fcc72246bb2
https://hal.archives-ouvertes.fr/hal-01937757
https://hal.archives-ouvertes.fr/hal-01937757
Autor:
CONTRERAS, Sylvie, KONCZEWICZ, Leszek, Arvinte, Roxana, PEYRE, Herve, Chassagne, Thierry, Zielinski, Marcin, JUILLAGUET, Sandrine
Publikováno v:
Physica Statut Solidi A
E-MRS : Wide bandgap materials for electron devices
E-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩
E-MRS : Wide bandgap materials for electron devices
E-MRS : Wide bandgap materials for electron devices, May 2016, Lille, France. pp.1600679, ⟨10.1002/pssa.201600679⟩
International audience; The Hall hole density pH and Hall mobility µH in highly aluminum-doped 4H-SiC have been investi-gated in the wide temperature range between 100 K and 900 K. After an overview of the literature data related to the analysis of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::dca9b13cbc5ee301d54a882bb84254e9
https://hal.archives-ouvertes.fr/hal-01540938
https://hal.archives-ouvertes.fr/hal-01540938
Autor:
LANDOIS, Perine, BAYLE, Maxime, Decams, J.M., Dieraert, Axel, HUNTZINGER, Jean-roch, WANG, Tianlin, PEYRE, Herve, JOUAULT, Benoit, ZAHAB, AHMED AZMI, PAILLET, MATTHIEU, CONTRERAS, Sylvie
Publikováno v:
GDR-GNT
GDR-GNT, Nov 2015, Aussois, France
GDR-GNT, Nov 2015, Aussois, France
International audience; Counting number of graphene layers on copper ? (OK for SiO2/Si, SiC, glass)Graphene source in Montpellier by CVD on copper and on SiC and by SiC sublimation (development of prototype furnace)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::8496cd66d61b848498173618d2bec7df
https://hal.archives-ouvertes.fr/hal-01340108
https://hal.archives-ouvertes.fr/hal-01340108
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Tsagaraki, Katerina, Nafouti, Maher, Peyre, Herve, Vamvoukakis, Konstantinos, Makris, Nikolaos, Kayambaki, Maria, Stavrinidis, Antonis, Konstantinidis, George, Panagopoulou, Marianthi, Alquier, Daniel, Zekentes, Konstantinos
Publikováno v:
Materials Science Forum; June 2018, Vol. 924 Issue: 1 p653-656, 4p
Autor:
Zekentes, Konstantinos, Vassilevski, Konstantin, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Peyre, Herve, Makris, Nikolaos, Bucher, Matthias, Schmid, Patrick, Stefanakis, Dionyssios, Tassis, Dimitrios
Publikováno v:
Materials Science Forum; May 2016, Vol. 858 Issue: 1 p913-916, 4p