Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

Autor: Alassaad, Kassem, Soulière, Véronique, Cauwet, François, Peyre, Hervé, Carole, Davy, Kwasnicki, Pawel, Juillaguet, Sandrine, Kups, Thomas, Pezoldt, Jörg, Ferro, Gabriel

Publikováno v: Acta Materialia 75 (2014) 219-226

In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets

Externí odkaz: http://arxiv.org/abs/1407.3222

4H-SIC p-type doping determination from secondary electrons imaging

Autor: Kayambaki, M, Makris, N., Tsagarakis, K., Peyre, Hervé, Stavrinidis, A, Zekentes, K.

Publikováno v: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM)
12th European Conference on Silicon Carbide and Related Materials (ECSCRM), Sep 2018, Birmingham, United Kingdom

session poster: MO.P.FP14; International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::528a0d5b3e7545608ac7fa10b4899ea8
https://hal.archives-ouvertes.fr/hal-02066375

Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seeds

Autor: Zoulis, Georgios, Lorenzi, Jean, Vasiliauskas, R., Jegenyes, N., Beshkova, M., Juillaguet, Sandrine, Peyre, Hervé, Soulière, Véronique, Syväjärvi, M., Ferro, Gabriel, Camassel, Jean, Yakimova, Rositza

Publikováno v: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09)
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::eec38ff24de1ad0e0eef2ab4ff7868c9
https://hal.archives-ouvertes.fr/hal-00390772

Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates

Autor: Contreras, Sylvie, Konczewicz, Leszek, Arvinte, Roxana, Ben Messaoud, Jaweb, Wang, Tian Lin, Peyre, Hervé, Chassagne, Thierry, Zielinski, Marcin, Juillaguet, Sandrine

Publikováno v: Materials Science Forum; May 2017, Vol. 897 Issue: 1 p275-278, 4p

Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy

Autor: Kwasnicki, Pawel, Arvinte, Roxana, Peyre, Hervé, Zielinski, Marcin, Juillaguet, Sandrine

Publikováno v: Materials Science Forum; June 2015, Vol. 821 Issue: 1 p237-240, 4p