Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Petru GAŞIN"'
Autor:
Dumitru UNTILA, Igor EVTODIEV, Iuliana CARAMAN, Valeriu KANTSER, Nicolae SPALATU, Liliana DMITROGLO, Silvia EVTODIEV, Dorin SPOIALĂ, Irina ROTARU, Petru GAŞIN
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 2 (102) (2017)
GaSe single crystals doped with Eu (0.025, 0.05, 0.5, 1.0 and 3.0 at%) were grown by Bridgman method using Ga, Se and Eu elementary components. The crystalline structure and vibration modes of the GaSe: Eu crystals lattice were studied by X-ray diffr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::c0d6e99a4512904d44f2e89d286ed851
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/851
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/851
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 7 (97) (2016)
Au fost obţinute homojoncţiuni n-pInP cu strat intermediar p-InP crescut repetat prin metoda HVPE cu sau fără strat frontal nCdS şi au fost cercetate proprietăţile electrice şi fotoelectrice ale acestora. S-a constatat că depunerea stratului
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::710bcbf695e337f33b829cc6f06f8e1a
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/705
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/705
Autor:
Timo A. Stein, Michael Kirsch, V. Fedorov, Petru Chetruş, Mihail Caraman, Marin Rusu, C. Kelch, Petru Gaşin, Martha Ch. Lux-Steiner, Sergiu Vatavu, Igor Evtodiev, Corneliu Rotaru
Publikováno v:
Thin Solid Films. 535:244-248
The influence of the manufacturing technology on the structural properties of CdTe and CdS layers, components of the CdS/CdTe solar cells, has been investigated. CdTe based solar cells have been prepared using glass substrates coated with different t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::435c822303ddd8fd980bf3e42f755ffc
https://doi.org/10.1016/j.tsf.2012.11.105
https://doi.org/10.1016/j.tsf.2012.11.105
Autor:
Mihail Caraman, Marin Rusu, Chris Ferekides, Tobias Tyborski, Christoph Merschjann, V. Fedorov, Corneliu Rotaru, Petru Gaşin, Martha Ch. Lux-Steiner, Sergiu Vatavu
Publikováno v:
MRS Proceedings. 1538:261-267
The CdTe photoluminescence spectra of CdTe/CdS/ZnO heterojunctions annealed in the presence of CdCl2 have been analyzed in the 4.7-100K temperature range. The analysis has been performed for laser excitation power between 0.01 mW and 30 mW. The analy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77748ab1ec53173658820d617c179e3a
https://doi.org/10.1557/opl.2013.983
https://doi.org/10.1557/opl.2013.983
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 7 (87) (2015)
A fost studiată influenţa tratării termice la temperaturi ridicate în azot sau în vid asupra proprietăţilor straturilor de GaN depuse pe siliciu prin metoda reacţiilor chimice de transport în sistemul (H2-NH3-HCl-Ga-Al), (HVPE). În spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::d536fe4b7340b6d58639ef7b5e6390bb
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/338
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/338
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 2 (82) (2015)
Electrical and photoelectrical properties of CdS/Cd1-xMnxTe heterojunction at different temperatures from 293 K to 393 K were studied. The potential barrier at 293 K makes 0,78 V and is linearly decreasing with temperature increase with a temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::f22dd286419ea680229d2c17966b2587
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/183
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/183
Autor:
Vasile BOTNARIUC, Petru GAŞIN, Leonid GORCEAC, Ion INCULEŢ, Boris CINIC, Andrei COVAL, Simion RAEVSCHI
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 2 (82) (2015)
Au fost studiate proprietăţile electrice şi fotoelectrice ale heterojoncţiunilor nCdS-pInP cu şi fără strat epitaxial inter-mediar poInP. S-a stabilit că la polarizări directe în mecanismul de transport al curentului predomină procesele de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::68288d6082f7efd77c6a64ba2ee70aaa
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/182
http://ojs.studiamsu.eu/index.php/exact-economic/article/view/182
Publikováno v:
Akademos: Revista de Ştiinţă, Inovare, Cultură şi Artă, Vol Nr. 4, Iss 19, Pp 91-97 (2010)
The article gives an overview of the results of investigations carried out at the Institute of Applied Physics of the Academy of Sciences of Moldova and the Department of Physics of Moldova State University in the science and engineering of semicondu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::5fcecef38eb9dca697f6a849fddd3e65
Publikováno v:
physica status solidi c. 6:1299-1302
The photoluminescence analysis of CdS/CdTe interface layer of CdS/CdTe heterojunction has been carried out in the 15-100 K temperature range. An attempt to correlate observed PL features with the CdSx Te1–x layer presence at the interface of the he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c0c45596a01bc89e5d95f9799d6b84
https://doi.org/10.1002/pssc.200881208
https://doi.org/10.1002/pssc.200881208
Publikováno v:
Thin Solid Films. 517:2195-2201
The influence of annealing in the presence of CdCl 2 and a thin copper layer deposited onto CdTe on the photoluminescence spectra of CdTe, as a component of CdS/CdTe heterojunction, has been studied for two excitation wavelengths: 0.337 μm and 0.632
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f59ea3bd4f45fedda864309799f7ca24
https://doi.org/10.1016/j.tsf.2008.10.087
https://doi.org/10.1016/j.tsf.2008.10.087