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pro vyhledávání: '"Petra Poth"'
Autor:
Tom Herrmann, Hongsik Yoon, Torsten Klick, Alban Zaka, Seunghwan Seo, Juergen Faul, Joerg Schmid, J. Kluth, Sandra Hecker, Zhen Xu, Udo Ziller, Chang Ming-Cheng, Ralf vanBentum, Gabriele Congedo, Vivek Joshi, Xin Zou, Hema Ramamurthy, Nigel Chan, Elke Erben, Youmean Lee, Petra Poth, C. Weintraub, Gerd Zschaetzsch
Publikováno v:
ESSDERC
This paper presents a 0.110um2Ultra Low Leakage (ULL) 6T-SRAM for Internet Of Things (lOT) application with competitive 0.7pA/cell retention leakage and $\pmb{1.45}\mathbf{mV}^{\ast}\mathbf{um}$ transistor mismatch coefficient (AVT). A back gate dopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e38aac1663ffb60b67b2bc0350072117
https://doi.org/10.1109/essderc.2018.8486897
https://doi.org/10.1109/essderc.2018.8486897
