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Publikováno v:
IEEE Transactions on Electron Devices. 68:202-207
The different effect of displacement damage produced by neutron irradiation on the static characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) p-i-n power diodes is explained using deep level transient spectroscopy (DLTS), ${C}$ – ${V}$ p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e106b3b3030aee9a05a64c098f3afa2
https://doi.org/10.1109/ted.2020.3038713
https://doi.org/10.1109/ted.2020.3038713
