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pro vyhledávání: '"Petr S. Smertenko"'
Publikováno v:
SPIE Proceedings.
This article describes the charge injection into porous silicon structures fabricated by electrochemical technique on 20 Ohm cm p-type silicon. The I-V characteristics, photoluminescence spectra and lifetime kinetics studied at temperatures 77 K, 293
Autor:
Petr S. Smertenko, Tamara Ya. Gorbach, Mikhail Ya. Valakh, Alexandr Dorofeev, S.V. Svechnikov, Galina Yu. Rudko, Vladimir V. Bondarenko
Publikováno v:
Scopus-Elsevier
Photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR) have been used to characterize porous silicon layers (PSL) exposed to HF destructive etching. The results obtained lend support to the view that chemical passivation, in partic
Externí odkaz:
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