Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Petr Polovodov"'
Autor:
Petr Polovodov, Didier Théron, Clément Lenoir, Dominique Deresmes, Sophie Eliet, Christophe Boyaval, Gilles Dambrine, Kamel Haddadi
Publikováno v:
Applied Sciences, Vol 11, Iss 6, p 2788 (2021)
The main objectives of this work are the development of fundamental extensions to existing scanning microwave microscopy (SMM) technology to achieve quantitative complex impedance measurements at the nanoscale. We developed a SMM operating up to 67 G
Externí odkaz:
https://doaj.org/article/964b6d1b66044e6293b62a9c9774c449
Publikováno v:
2018 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS)
2018 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS), Jul 2018, Nagoya, France. ⟨10.1109/MARSS.2018.8481160⟩
2018 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS), Jul 2018, Nagoya, Japan. ⟨10.1109/MARSS.2018.8481160⟩
2018 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS), Jul 2018, Nagoya, France. ⟨10.1109/MARSS.2018.8481160⟩
2018 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS), Jul 2018, Nagoya, Japan. ⟨10.1109/MARSS.2018.8481160⟩
International audience; Near-field scanning microwave microscopy (NSMM) has to face several issues for the establishment of traceable and quantitative data. In particular, at the nanoscale, the wavelength of operation in the microwave regime appears
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::941f318a9ed6c781ecd98dd8b47e3287
https://hal.archives-ouvertes.fr/hal-01913677
https://hal.archives-ouvertes.fr/hal-01913677
Autor:
Fouad Maroun, Nathan G. Young, Petr Polovodov, Wiebke Hahn, Jacques Peretti, Jean-Marie Lentali, Y. Lassailly, James S. Speck, Claude Weisbuch, Lucio Martinelli, Marcel Filoche
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXVI.
In nitride ternary alloys, natural compositional disorder induces strong electronic localization effects. We present a new experimental approach which allows a direct probing at nanometer scale of disorder-induced localization effects in InGaN/GaN qu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd515f117ac0fb69ffba1fce19a10d1
https://doi.org/10.1117/12.2290887
https://doi.org/10.1117/12.2290887