Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Petr Lazarenko"'
Autor:
Petr Lazarenko, Vadim Kovalyuk, Pavel An, Aleksey Prokhodtsov, Alexander Golikov, Aleksey Sherchenkov, Sergey Kozyukhin, Ilia Fradkin, Galina Chulkova, Gregory Goltsman
Publikováno v:
APL Materials, Vol 9, Iss 12, Pp 121104-121104-8 (2021)
We have studied transmission spectra of a silicon nitride O-ring resonator with a Ge2Sb2Te5 (GST) thin-film cover. We have performed numerical simulations of the transmission, absorption, reflection, and scattering for the GST cells of various thickn
Externí odkaz:
https://doaj.org/article/00bd39e245c24025be3e15058d1db628
Publikováno v:
Micromachines, Vol 11, Iss 2, p 199 (2020)
The influence of illumination intensity and p-type silicon doping level on the dissolution rate of Si and total current by photo-assisted etching was studied. The impact of etching duration, illumination intensity, and wafer doping level on the etchi
Externí odkaz:
https://doaj.org/article/be053362a47d4bf2a95e844f1e173efd
Autor:
Tatyana Kunkel, Yuri Vorobyov, Mikhail Smayev, Petr Lazarenko, Alex Kolobov, Sergey Kozyukhin
Publikováno v:
Applied Surface Science. 624:157122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5409ed718c5ccb314b435a7b4c38b8b5
https://doi.org/10.1016/j.apsusc.2023.157122
https://doi.org/10.1016/j.apsusc.2023.157122
Autor:
Gennady L. Rusinov, Ekaterina V. Krivogina, Petr Lazarenko, Valery N. Charushin, Ekaterina V. Belova, Egor V. Verbitskiy, Vitaly A. Grinberg, Alexey R. Tameev, Jean-Michel Nunzi, Alexander S. Steparuk, V. V. Emets, Ekaterina F. Zhilina, Sergey Kozyukhin
Publikováno v:
Electronic Materials, Vol 2, Iss 12, Pp 142-153 (2021)
Electronic Materials
Volume 2
Issue 2
Pages 12-153
Electronic Materials
Volume 2
Issue 2
Pages 12-153
New donor–π–acceptor pyrimidine-based dyes comprising an amide moiety as an anchoring group have been designed. The dyes were synthesized by sequential procedures based on the microwave-assisted Suzuki cross-coupling and bromination reactions. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c541736847a7b80a5a2b60f9a06abeb
https://www.mdpi.com/2673-3978/2/2/12
https://www.mdpi.com/2673-3978/2/2/12
Autor:
Sergey Kozyukhin, M. E. Fedyanina, Alexey Sherchenkov, V. S. Levitskii, A. O. Yakubov, I. V. Sagunova, Petr Lazarenko, Yu. V. Vorobyov, A. A. Dedkova
Publikováno v:
Semiconductors. 54:1775-1783
—Extensive studies of Ge2Sb2Te5 material are associated with the possibility of producing multilevel nonvolatile elements for high-speed integrated optical functional circuits. The principle of multilevel recording in such devices is based on the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f4c77252f521327c8289696d29cb779
https://doi.org/10.1134/s1063782620130060
https://doi.org/10.1134/s1063782620130060
Autor:
Aleksandr, Kolchin, Dmitrii, Shuleiko, Mikhail, Martyshov, Aleksandra, Efimova, Leonid, Golovan, Denis, Presnov, Tatiana, Kunkel, Victoriia, Glukhenkaya, Petr, Lazarenko, Pavel, Kashkarov, Stanislav, Zabotnov, Sergey, Kozyukhin
Publikováno v:
Materials (Basel, Switzerland). 15(10)
Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::71fb676a7dc31a4c5a55f617488d4123
https://pubmed.ncbi.nlm.nih.gov/35629526
https://pubmed.ncbi.nlm.nih.gov/35629526
Autor:
Petr Lazarenko, Elena Kirilenko, I. V. Sagunova, A. O. Yakubov, Alexey Sherchenkov, A. V. Babich
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 142:1019-1029
The influence of the adjacent layers (SiO2, Al, Ni, Ti, W, TiN, TiN/W) on the crystallization kinetics of Ge2Sb2Te5 thin films was investigated using the techniques based on the application of two different methods—differential scanning calorimetry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e11060deb97212dfec0e4646d2f2cc7a
https://doi.org/10.1007/s10973-020-10013-5
https://doi.org/10.1007/s10973-020-10013-5
Autor:
N. A. Grigoryeva, Ilja I. Nikolaev, Sergey Kozyukhin, Oleg Konovalov, Alexander V. Kolobov, Petr Lazarenko, G. A. Valkovskiy
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:10196-10206
Ge–Sb–Te (GST)-based PCM alloys are currently used in optical data storage. The crystallization of GST materials is the rate-limiting step for these devices, hence a deeper knowledge of the crystallization mechanism is crucial for insightful deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a458bc98687facb9ad281506386d2f6
https://doi.org/10.1007/s10854-020-03565-7
https://doi.org/10.1007/s10854-020-03565-7
Autor:
I. V. Sagunova, M. E. Fedyanina, Alexey Sherchenkov, A. O. Yakubov, A. V. Kukin, Petr Lazarenko, Yu. V. Vorobyov, Yu. S. Sybina, Sergey Kozyukhin
Publikováno v:
Inorganic Materials: Applied Research. 11:330-337
The method of spectrophotometry with transmission and reflection spectra recording is used to study the peculiarities of estimating the optical band gap in Ge2Sb2Te5 thin films after annealing at different temperatures, in particular, in the temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f662226bb5f97817add4b373426ccd8
https://doi.org/10.1134/s2075113320020227
https://doi.org/10.1134/s2075113320020227