Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Petr Kostelník"'
Autor:
A. Constant, Freddy De Pestel, H. Ziad, Joris Baele, Tomas Novak, Peter Coppens, Petr Kostelník
Publikováno v:
Materials Science in Semiconductor Processing. 137:106157
Polycrystalline AlN grown on Si3N4 by metal organic chemical vapor deposition is found to be wet etched by EKC265™ polymer strip solution, in which the active component is hydroxylamine (H3NO). The etch rate shows to be strongly dependent on surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e10191688d31b3beda7b9b1d449e4a
https://doi.org/10.1016/j.mssp.2021.106157
https://doi.org/10.1016/j.mssp.2021.106157
Publikováno v:
Applied Surface Science. 421:859-865
We report an investigation of the optical and structural properties of wurtzite phase AlxGa1-xN/AlN structure grown on Si(111) within the compositional range of 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28be5e99b03d4dc48b25e938cfbb3d9
https://doi.org/10.1016/j.apsusc.2017.02.056
https://doi.org/10.1016/j.apsusc.2017.02.056
Publikováno v:
physica status solidi (b). 256:1970040
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f6cbbd11be76e68a389ac705dd9a1f
https://doi.org/10.1002/pssb.201970040
https://doi.org/10.1002/pssb.201970040
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD26
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9932e9df9c47e048b25bf41f2b426ee5
https://doi.org/10.7567/1347-4065/ab138e
https://doi.org/10.7567/1347-4065/ab138e
Publikováno v:
Japanese Journal of Applied Physics. 58:SC1018
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::070904fece1e71c8b28b0dbb9edfaf98
https://doi.org/10.7567/1347-4065/ab0d00
https://doi.org/10.7567/1347-4065/ab0d00
Publikováno v:
Solid State Phenomena. :284-289
We report on a novel method of low pressure chemical vapor deposition of polycrystalline silicon layers used for external gettering in silicon substrate for semiconductor applications. The proposed method allowed us to produce layers of polycrystalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be6623fafe0eff170ed02edc21882ce1
https://doi.org/10.4028/www.scientific.net/ssp.205-206.284
https://doi.org/10.4028/www.scientific.net/ssp.205-206.284
Autor:
Petr Kostelník, Jan Sik
Publikováno v:
Advanced Science, Engineering and Medicine. 5:603-607
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99968a9030692bc9e8159cd24713ae39
https://doi.org/10.1166/asem.2013.1328
https://doi.org/10.1166/asem.2013.1328
Autor:
Jindřich Mach, Petr Kostelník, J. Spousta, Petr Bábor, Stanislav Voborný, Tomáš Šikola, Jan Čechal
Publikováno v:
Surface Science. 601:2047-2053
Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d47dac6b62f93674708344730c45836
https://doi.org/10.1016/j.susc.2007.02.038
https://doi.org/10.1016/j.susc.2007.02.038
Autor:
Edvin Lundgren, Nicola Seriani, Peter Varga, Volker Blum, Tomáš Šikola, Michael Schmid, Anders Mikkelsen, Georg Kresse, Petr Kostelník
Publikováno v:
Surface Science. 601:1574-1581
Using low energy electron diffraction (LEED), density functional theory (DFT) and scanning tunneling microscopy (STM), we have re-analyzed the Pd(100)-(root 5 x root 5)R27 degrees-O surface oxide structure consisting, in the most recent model, of a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cb67f22c2aeddd4fb0a54158c21324
https://doi.org/10.1016/j.susc.2007.01.026
https://doi.org/10.1016/j.susc.2007.01.026
Autor:
Petr Bábor, M. Plojhar, Petr Kostelník, Miroslav Kolíbal, O. Tomanec, Peter Bauer, Tomáš Šikola, Michal Potoček, Stanislav Průša, S.N. Markin
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:318-321
In the paper the ability of TOF-LEIS to monitor the growth of ultrathin Ga layers in situ is presented. The FWHM of the Ga peaks in the TOF-LEIS spectra showed a linear dependence on Ga coverage. The analysis of the Ga growth on two Si(1 1 1) substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99e5ba1c3e44194e3edfbf16f7e52736
https://doi.org/10.1016/j.nimb.2006.04.020
https://doi.org/10.1016/j.nimb.2006.04.020