Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Petr Konstantinov"'
Publikováno v:
e-GFOS, Vol 12, Iss 22, Pp 29-40 (2021)
This paper presents the results of studies on the analytical dependence between the value of a longitudinal distributed load and the frequency of free vibrations in a uniform rod. Based on the exact solution of the corresponding differential equation
Externí odkaz:
https://doaj.org/article/7ca2a4cd81c445f19a99cd67fd0d7daf
Autor:
Dmitry Pshenay-Severin, Satya Narayan Guin, Petr Konstantinov, Sergey Novikov, Ekashmi Rathore, Kanishka Biswas, Alexander Burkov
Publikováno v:
Materials
Volume 16
Issue 3
Pages: 1130
Volume 16
Issue 3
Pages: 1130
Sulfides and selenides of copper and silver have been intensively studied, particularly as potentially efficient thermoelectrics. Ag3CuS2 (jalpaite) is a related material. However very little is known about its physical properties. It has been found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a22252fb2c74a70fdd29fda5d823d9a4
Autor:
Andrei Novitskii, Illia Serhiienko, Sergey Novikov, Yerzhan Ashim, Mark Zheleznyi, Kirill Kuskov, Daria Pankratova, Petr Konstantinov, Andrei Voronin, Oleg A. Tretiakov, Talgat Inerbaev, Alexander Burkov, Vladimir Khovaylo
In this study, we demonstrate that introducing of rare-earth elements, $R$ = La or Pr, into the Bi-O charge reservoir layer of BiCuSeO leads to an increase of both, the charge carrier concentration and the effective mass. Although the charge carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::14366a01b78ebdf40d614031fb04438e
Autor:
Petr Konstantinovich Skorobogatov, Konstantin Alekseevvich Epifantsev, Nikolai Sergeyevich Djatlov, Oleg Anatolievich Gerasimchuk
Publikováno v:
Безопасность информационных технологий, Vol 23, Iss 3, Pp 69-72 (2016)
The results of the single pulsing electrical overstress (EOS) series with energy below the threshold of failure for modern submicron IC’s design are presented. The study was conducted on two types of modern sub-micron VLSI. The obtained results con
Externí odkaz:
https://doaj.org/article/0cb90b1982764f7e94d4d1a45448b187
Publikováno v:
Безопасность информационных технологий, Vol 23, Iss 3, Pp 61-68 (2016)
A version of the existing evaluation method of electronic equipment to the influence of charged space particles causing single event effects for the purpose of improving the accuracy of calculation in the field of information safety is suggested. On
Externí odkaz:
https://doaj.org/article/2a44b67200d5415f8f60d1ee9d4894a8