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pro vyhledávání: '"Peter de Loijer"'
Autor:
Bart Smeets, Lei Zhang, Anita Bouma, Peter de Loijer, Willem van Mierlo, Wendy Liebregts, Bart Rijpers, Tran Thanh Thuy Vu, Goosen Maikel Robert
Publikováno v:
Optical Microlithography XXXI.
Scanner induced pattern shifts between layers are a large contributor to DRAM Bitline to Active overlay. One of the main root causes for this Pattern Shift non-Uniformity are lens aberrations. Currently measuring the Bitline to Active overlay require
Autor:
Christophe Beral, Hidetami Yaegashi, Mark John Maslow, Tae Kwon Jee, Ming Mao, Stephane Lariviere, Serge Biesemans, Kaushik A. Kumar, Paolo Di Lorenzo, Joost Bekaert, Peter de Loijer, Andrew Metz, Vadim Timoshkov, Soichiro Okada, Shinya Morikita, Marc Demand, Ton Kiers
Publikováno v:
SPIE Proceedings.
Complimentary lithography is already being used for advanced logic patterns. The tight pitches for 1D Metal layers are expected to be created using spacer based multiple patterning ArF-i exposures and the more complex cut/block patterns are made usin