Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Peter Zandbergen"'
Autor:
Peter Zandbergen, D. Van Steenwinckel, Jeroen Herman Lammers, H Kwinten, Casper A. H. Juffermans
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 18:37-41
This work describes approaches in the field of process extensions, complementary to the more traditional optical extension techniques, to enable the extension of optical lithography to 45-nm technologies.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e497dd58639fc42b08951ec46edaf2a9
https://doi.org/10.1109/tsm.2004.841755
https://doi.org/10.1109/tsm.2004.841755
Publikováno v:
Microelectronic Engineering. 35:193-196
When linewidths in optical lithography are reduced, proximity bias, defined here as isolated to dense linewidth offsets, can consume large parts of the CD budget. This paper describes the resist thickness influence on proximity bias. If reflective su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3f8030f8bb58b22970bbc239c5397e4
https://doi.org/10.1016/s0167-9317(96)00108-6
https://doi.org/10.1016/s0167-9317(96)00108-6
Publikováno v:
Microelectronic Engineering. 27:421-424
With E-beam exposures, the resolution limits of structures in resists are usually determined by electron scattering through resist and substrate, limiting the aspect ratios. The experimental results presented in this paper indicate, that when AZ-PF51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b74371d6e1dc7c401c3e18b476d68308
https://doi.org/10.1016/0167-9317(94)00138-k
https://doi.org/10.1016/0167-9317(94)00138-k
Autor:
Han J. Dijkstra, Peter Zandbergen
Publikováno v:
Microelectronic Engineering. 23:299-302
Chemically amplified positive tone deep UV resist SUCCESS DP2503.ST2 of BASF was evaluated for E-beam applicability. Process optimisation and tests have been focussed on imaging capabilities and delay time effects. While for some other chemically amp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20dc6ea301b608e4cb22529253b720b3
https://doi.org/10.1016/0167-9317(94)90160-0
https://doi.org/10.1016/0167-9317(94)90160-0
Publikováno v:
SPIE Proceedings.
ArF immersion lithography has opened the road towards increased optical resolution at the 193nm wavelength. Consequently, keeping the same 4X optical demagnification factor, the dimensions on the mask scale down to sub-wavelength values when we enter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::435af256006b2a2d55ecf9b0b35d9135
https://doi.org/10.1117/12.659345
https://doi.org/10.1117/12.659345
Publikováno v:
Optical Microlithography XVIII.
Through ArF immersion lithography a road towards increased optical resolution at the 193nm wavelength has been opened. According to recently proposed roadmaps, ArF immersion lithography will be used for 65nm and 45nm technology nodes. Consequently, k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb0c0b873893d4487d1d8e44d7c8e8fd
https://doi.org/10.1117/12.597438
https://doi.org/10.1117/12.597438
Publikováno v:
SPIE Proceedings.
Assessment for introduction of immersion lithography into volume manufacturing has recently started, where one of the key focus areas includes defectivity. Particularly, the possible presence of bubbles in the immersion liquid could act as a defect s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d6c8dd05851100fa510cb347d9e861
https://doi.org/10.1117/12.599643
https://doi.org/10.1117/12.599643
Publikováno v:
SPIE Proceedings.
Today we see that 248nm lithography is pushed to the region of very low k1-factors. The first 193nm systems are now on the market, but the technology needs still needs to mature before its optimum performance can be reached. On the other hand, develo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b71bcc75de67b55d112b32278caa3ca
https://doi.org/10.1117/12.389027
https://doi.org/10.1117/12.389027
Autor:
Lena Zavyalova, Gilles R. Amblard, John S. Petersen, Martin McCallum, Wolf-Dieter Domke, Peter Zandbergen, Bruce W. Smith
Publikováno v:
SPIE Proceedings.
Lithography at 193nm is the first optical lithography technique that will be introduced for manufacturing of technology levels. where the required dimensions are smaller than the actual wavelength. This paper explores several techniques to extend 193
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ec6f6fbcd973d9018d9cf796354fed6
https://doi.org/10.1117/12.354343
https://doi.org/10.1117/12.354343
Autor:
Martin McCallum, Alan Stephen, Jeff Meute, Jeff D. Byers, Kim Dean, Peter Zandbergen, Gilles R. Amblard, Carla M. Nelson-Thomas
Publikováno v:
SPIE Proceedings.
The goal of this paper is to define a 'state of the art' of the lithographic performance obtained with an advanced 193 nm single layer resist process, for 150 nm technology generation specification and below. Even if the goal of the paper is not to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c873738544fb06aaaa8056c0e16e8057
https://doi.org/10.1117/12.350270
https://doi.org/10.1117/12.350270